Carrier recombination at grain boundaries in polycrystalline silicon under optical illumination

Joshi, D. P.

doi:10.1016/0038-1101(86)90192-9

Cited by 31 publications

(4 citation statements)

References 25 publications

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“…As shown in Figure 7 , obvious larger perovskite grains in CH 3 NH 3 PbI 3 :PC 61 BM thin film were observed, which is consistent with the observations from UV–vis absorption spectra and XRD patterns. Given that the grain boundaries are generally the recombination sites, the larger grains with less grain boundaries are favorable for the charge carrier transportation, which consequently inhibits the recombination within the BHJ composites activelayer . The results decipher the intensively enhanced FF and the minor raised V OC …”

Section: Resultsmentioning

confidence: 96%

Efficient Solution‐Processed Bulk Heterojunction Perovskite Hybrid Solar Cells

Liu

Wang

et al. 2015

Advanced Energy Materials

105

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than that of the holes in CH 3 NH 3 PbCl 3− x I x ( L eff, e− / L eff , h+ < 1), measured by the electron-beam induced current (EBIC) method, [ 23 ] a mesoporous electron transporting scaffold is indispensable to effectively extract and transport the electrons. Consequently, high PCEs over 15% from meso-superstructured pero-HSCs (MS pero-HSCs) have been achieved by applying mesoporous TiO 2 and Al 2 O 3 as the electron extraction layer (EEL) and insulating scaffold, respectively. [24][25][26][27][28] In addition, one outstanding advantage of MS pero-HSCs over that of PHJ pero-HSCs is the higher consistence of effi ciency under different scan rates and scan directions, showing less hysteresis and transient behavior in current-voltage measurement, [ 29 ] which is critically important for high throughput large-scale manufacturing pero-HSCs products. Nevertheless, the high temperature sintering process for mesoporous metal oxides (TiO 2 /Al 2 O 3 ) and the homogeneous infi ltration of perovskite materials into the mesoporous electron extraction material [24][25][26][27][28] are especially adverse for large-scale commercialization of pero-HSCs.To address these problems, we fabricate conventional "bulk heterojunction" (BHJ) pero-HSCs by mixing PC 61 BM ([6,6]-phenyl-C61-butyric acid methyl ester) with CH 3 NH 3 PbI 3 , which aims to circumvent issues existed in the PHJ and MS pero-HSCs, while inheriting advantages from both constructions. In the conventional BHJ pero-HSCs, PC 61 BM has twofold contributions. First, PC 61 BM can effectively extract the electrons from the PC 61 BM/CH 3 NH 3 PbI 3 interfaces, [ 30,31 ] which is originated from the high electron affi nity (−4.3 eV) of PC 61 BM [ 32 ] and a ≈0.4 eV energy level offset between the lowest unoccupied molecular orbit (LUMO) energy level of CH 3 NH 3 PbI 3 (−3.9 eV) and that of PC 61 BM (−4.3 eV). In this way, PC 61 BM acts as the "electron acceptor" in the BHJ composite of CH 3 NH 3 PbI 3 :PC 61 BM, which would address the issues induced by the shorter diffusion length of the electrons than that of holes in CH 3 NH 3 PbI 3 .[ 23 ] Second, a retarded reaction between CH 3 NH 3 I and PbI 2 is expected with the addition of PC 61 BM. The interactions between the ester group of PC 61 BM and CH 3 NH 3 I could form an intermediate phase, which is expected to induce more uniform and dense perovskite layers (detailed discussion in later context).

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Section: Resultsmentioning

confidence: 96%

Efficient Solution‐Processed Bulk Heterojunction Perovskite Hybrid Solar Cells

Liu

Wang

et al. 2015

Advanced Energy Materials

105

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“…( 12), when the rate of decrease of the grain boundary defect density (N T ) by increasing the grain size to obtain the required resistivity is less than that of the doping concentration (N) to increase the activation energy, the activation energy increases, which increases the TCR value with the grain size. Using the relation between the grain boundary defect density and the grain size in the polysilicon 9) and eqs. ( 5), ( 12) and ( 13),…”

Section: Properties Of Large-grain Polysiliconmentioning

confidence: 99%

An Infrared Sensing Material Using a Large-Grain Polysilicon Film

Kim

Lee

2005

Jpn. J. Appl. Phys.

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“…The interface is an extended defect that can hold interfacial carrier traps, as well as carrier recombination centers 66 – 69 . Furthermore, the n -type Mn 5 Ge 3 / p -type Ge interface corresponds to an ohmic contact (Fig.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer

Portavoce,

Hassak,

Bertoglio

2023

Sci Rep

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Thermoelectricity is a well-known effect that can be used to convert heat energy into electrical energy. However, the yield of this conversion is still low compared to current photovoltaic technology. It is limited by the intrinsic properties of materials, leading to intensive materials science investigations for the design of efficient thermoelectric (TE) materials. Interface engineering was shown to be a valuable solution for improving materials’ TE properties, supporting the development of multiphase TE materials. In particular, interfaces have been suggested to promote the increase of the Seebeck coefficient of materials without significantly impacting their electrical conductivity through the so-called energy filtering effect. This work aims at determining experimentally the effect of a metal/semiconductor interface exhibiting an ohmic character on the effective Seebeck coefficient of multiphase materials, focusing on the n-type Mn5Ge3/p-type Ge interface. This interface is shown not to contribute to carrier transport, but to contribute to carrier concentration filtering due to carrier injection or recombination. The Seebeck coefficient of the bi-phase material is shown to be dependent on the direction carriers are crossing the interface. The interface effect mainly results from a modification of charge carrier concentrations in the semiconductor.

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Carrier recombination at grain boundaries in polycrystalline silicon under optical illumination

Cited by 31 publications

References 25 publications

Efficient Solution‐Processed Bulk Heterojunction Perovskite Hybrid Solar Cells

Efficient Solution‐Processed Bulk Heterojunction Perovskite Hybrid Solar Cells

An Infrared Sensing Material Using a Large-Grain Polysilicon Film

Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer

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