Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Controllability of β-Ga2O3 single crystal conductivity by V doping

“…Nine phonon mode peaks were detected, derived from the undoped and V-doped β-Ga 2 O 3 crystals, which coincided with the data in the literature. 30,41 These and A (3) g ) are related to vibrations and translations of the [Ga I O 4 ] tetrahedral chains; the secondaryfrequency phonon modes (A (4) g , A (5) g and A (6) g ) are attributed to the deformation of the [Ga I O 4 ] tetrahedron and [Ga II O 6 ] octahedron; and the third-frequency phonon modes (A (8) g , A (9) g and A (10) g ) are assigned to the stretching and bending of the [Ga I O 4 ] tetrahedron. The addition of V atoms significantly inhibited A (4) g , A (5) g and A (6) g (as shown in Fig.…”

“…The continuous development of materials, has enabled the application of semiconductors in photodetectors, 1,2 solar cells, 3,4 light-emitting diodes, 5,6 and various other fields. 7–9 Beta-gallium oxide (β-Ga 2 O 3 ) crystals, as an outstanding representative of the emerging semiconductors, have been increasingly applied in semiconductor fields such as high-power electronic devices, 10 ultraviolet detectors, 11 and gas sensors 12 largely owing to their excellent material properties.…”

“…This journal is © The Royal Society of Chemistry 2022 peaks were located in B (2) g : 144 cm −1 , A (2) g : 169 cm −1 , A (3) g : 199 cm −1 , A (4) g : 320 cm −1 , A (5) g : 345 cm −1 , A (6) g : 416 cm −1 , A (8) g : 629 cm −1 , A (9) g : 658 cm −1 , and A (10) g : 766 cm −1 , and could be divided into three groups: 51,52 the primary-frequency phonon modes (B (2) g , A (2) g…”

Realization of Highly Efficient InGaN Green Light-Emitting Diodes with Laser-Annealed Multiple-Quantum Well Structures: Formation of Quantum Dot Structures

“…Self-assembled epitaxy of InGaN QDs based on the Stranski−Kastranow (S−K) growth mode has been successfully achieved by both metal−organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). 14,15,21 However, this method had some drawbacks such as the relatively low QD density and inhomogeneous size distribution, which might broaden the photoluminescence (PL) spectrum and prolong the decay lifetime. 22,23 In addition, the strain field in the wetting layers from the S−K-grown QDs reduced the envelope function overlap and recombination rate in the active region.…”

“…Third, InGaN QDs reduced the built-in piezoelectric polarization field and alleviated the QCSE. , Currently, there are several types of methods for obtaining InGaN QDs. Self-assembled epitaxy of InGaN QDs based on the Stranski–Kastranow (S–K) growth mode has been successfully achieved by both metal–organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). ,, However, this method had some drawbacks such as the relatively low QD density and inhomogeneous size distribution, which might broaden the photoluminescence (PL) spectrum and prolong the decay lifetime. , In addition, the strain field in the wetting layers from the S–K-grown QDs reduced the envelope function overlap and recombination rate in the active region . Selective-area epitaxy and site-controlled reactive ion etching were two alternative techniques for forming QDs with superior size control; however, the QD size density was restricted by the mask dimensions, and these QDs could be quite large (∼20 nm diameter). ,, Because of the relatively complex manufacturing or the high cost of the QD preparation method, the researchers tried to develop new ways to obtain small QD structures.…”