Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires

Zhang, Wei; Lehmann, Sebastian; Mergenthaler, Kilian; Wallentin, Jesper; Borgström, Magnus T.; Pistol, Mats‐Erik; Yartsev, Arkady

doi:10.1021/acs.nanolett.5b02022

Cited by 29 publications

(34 citation statements)

References 46 publications

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“…The lateral size of these nanoplates was 300 nm, which is much smaller than that of pristine TiSe 2 . This indicates S anions can act as a growth‐control agent and lead to a decrease of the nanostructure size as previously reported . The transmission electron microscope (TEM) image (Figure b) the S‐TiSe 2 indicate that the product is hexagonal nanoplates with the edge length of about 150 nm.…”

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confidence: 74%

S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

Yang

Zhang

et al. 2017

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2D Sulfur-doped TiSe /Fe O (named as S-TiSe /Fe O ) heterostructures are synthesized successfully based on a facile oil phase process. The Fe O nanoparticles, with an average size of 8 nm, grow uniformly on the surface of S-doped TiSe (named as S-TiSe ) nanoplates (300 nm in diameter and 15 nm in thickness). These heterostructures combine the advantages of both S-TiSe with good electrical conductivity and Fe O with high theoretical Li storage capacity. As demonstrated potential applications for energy storage, the S-TiSe /Fe O heterostructures possess high reversible capacities (707.4 mAh g at 0.1 A g during the 100th cycle), excellent cycling stability (432.3 mAh g after 200 cycles at 5 A g ), and good rate capability (e.g., 301.7 mAh g at 20 A g ) in lithium-ion batteries. As for sodium-ion batteries, the S-TiSe /Fe O heterostructures also maintain reversible capacities of 402.3 mAh g at 0.1 A g after 100 cycles, and a high rate capacity of 203.3 mAh g at 4 A g .

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confidence: 74%

S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

Yang

Zhang

et al. 2017

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“…As shown in Figure , a clear emission peak at about 470 nm for bare g‐C 3 N 4 is observed, which responds to the band‐gap electron–hole pairs recombination. Furthermore, 2.5 % PtNi x /g‐C 3 N 4 shows a weaker emission peak intensity with respect to the pure g‐C 3 N 4 , implying a lower radiative recombination of photoexcited electrons and holes in 2.5 % PtNi x /g‐C 3 N 4 ; in other words, the recombination of photogenerated charges could be suppressed efficiently after loading PtNi x on g‐C 3 N 4 .…”

Section: Evaluation Of the Separation Efficiency Of Photogenerated Chmentioning

confidence: 96%

Enhanced Separation Efficiency of PtNi_x/g‐C₃N₄ for Photocatalytic Hydrogen Production

Gao

et al. 2017

ChemCatChem

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Bimetallic materials hold promise for improving catalyst activity, yet little is known about the photocatalytic mechanism that these systems undergo during photocatalytic reaction that lead to efficient catalyst. Herein, we synthesized g‐C3N4 combined with PtNix, which shows much higher photocatalytic activity than that of pure g‐C3N4 and achieves the highest H2 evolution rate of 8456 μmol h−1 g−1 for 2.5 % PtNix/g‐C3N4. The excellent photocatalytic activity resulted from the enhanced charge‐separation efficiency compared to the pristine g‐C3N4, which was proved by surface photovoltage, photoluminescence, and transient photovoltage spectra. Electrochemical impedance spectroscopy in the dark further confirms the ability of charge transfer of 2.5 % PtNix/g‐C3N4 is superior to that of pure g‐C3N4. This effective separation efficiency gives rise to the observed excellent photocatalytic activity. This study not only provides us with an efficient catalyst for water splitting, but opens new avenues for designing and developing platinum‐based photocatalysts.

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“…For n-doped InP, the recombination is still radiative 119,120,128 , but p-doped InP has a short lifetime due to electron-acceptor recombination as shown in Fig 11. Doping related nonradiative recombination centers have also been reported for Sulphur doped InP nanowires. Zhang et al 129,130 showed that Sulphur introduces hole traps which strongly decrease the lifetime and thus also degrade the internal photoluminescence efficiency. We emphasize that more doping studies are required in the future to establish p-n doped nanowires which are capable to achieve a high internal photoluminescence efficiency at open circuit conditions.…”

Section: • 10mentioning

confidence: 99%

“…12. In these plots, these authors compare the results published by different authors 129,131,[135][136][137][138][139][140][141] with their own as-grown InP nanowires as well as with InP nanowires passivated with POx/Al2O3, deposited by atomic layer deposition (ALD). Although bulk InP is not featuring the longest reported minority carrier lifetime, the 5.4 ns lifetime from Black et al is still one of the best results published so far.…”

Section: • 10mentioning

confidence: 99%

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Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Haverkort

Garnett

Bakkers

2018

Applied Physics Reviews

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Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic engineering by nanowire tapering allows high solar light absorption. In combination with sufficiently high carrier selectivity at the contacts, the short-circuit current (Jsc) has presently reached 29.3 mA/cm 2 , reasonable close to the 34.6 mA/cm 2 theoretical limit for InP. Although further optimization of the current is important, an equally challenging condition to approach the Shockley Queisser (S-Q) limit is to increase the open-circuit voltage (Voc) towards the radiative limit. The key requirement to reach the radiative limit is to increase the external radiative efficiency at open-circuit conditions towards unity. It is the main purpose of this review to highlight recent progress in nanophotonic engineering to further enhance the open circuit voltage of a nanowire solar cell. In addition to material optimization for increasing the internal photoluminescence efficiency, the light extraction efficiency is a major design criterium for enhancing the external radiative efficiency and thus the Voc. Since the semiconductor substrate is a sink for internally generated photoluminescence, it is equally important to eliminate the loss of emitted light into the substrate. Even at the S-Q limit, the Voc is still substantially decreased by a photon entropy loss due to the conversion of a parallel beam of photons from the sun into an isotropic emission pattern, in which each individual photon is emitted into a random direction. The 46.7% ultimate solar cell limit for direct solar irradiation can only be approached, once the cell is capable to focus all emitted photoluminescence back to the sun. We will show that nanophotonic engineering provides a pathway to approach the ultimate limit.

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Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires

Cited by 29 publications

References 46 publications

S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

Enhanced Separation Efficiency of PtNi_x/g‐C₃N₄ for Photocatalytic Hydrogen Production

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

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Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires

Cited by 29 publications

References 46 publications

S‐Doped TiSe2 Nanoplates/Fe3O4 Nanoparticles Heterostructure

S‐Doped TiSe2 Nanoplates/Fe3O4 Nanoparticles Heterostructure

Enhanced Separation Efficiency of PtNix/g‐C3N4 for Photocatalytic Hydrogen Production

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

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Product

Resources

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S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

S‐Doped TiSe₂ Nanoplates/Fe₃O₄ Nanoparticles Heterostructure

Enhanced Separation Efficiency of PtNi_x/g‐C₃N₄ for Photocatalytic Hydrogen Production