2024
DOI: 10.3390/nano14131072
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Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces

Grigorii Savchenko,
Evgeniia Shabunina,
Anton Chernyakov
et al.

Abstract: We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE ranging from 4% to 70%. We found a significant correlation between the LEDs’ electro-optical properties and the degree of nanomaterial disorder (DND) in quantum wells (QWs) and heterointerfaces. DND depends on the nanoarrangement of domain structure, random alloy fluctuations, and the presence of local regions with disrupted alloy stoichiometry. The decrease in EQE values is attributed to increased DND and excited defect (ED)… Show more

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