Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Husein, Sebastian; Stückelberger, Michael; West, Bradley; Ding, Laura; Dauzou, Fabien; Morales‐Masis, Monica; Duchamp, Martial; Holman, Zachary C.; Bertoni, Mariana I.

doi:10.1063/1.5033561

Cited by 17 publications

(35 citation statements)

References 50 publications

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“…Meanwhile, the SH-SnO 2 film showed two-fold higher hydrogen intensity than that of the SO-SnO 2 film due to hydrogen incorporation from H-containing species in H 2 O plasma. Notably, hydrogen impurity concentrations in various oxides influence the crystalline structure and electrical properties, like carrier mobility and concentrations [32][33][34]. For example, Husein et al reported that hydrogen-doped indium oxide films showed decreased electron mobility as the hydrogen content was increased to 5.7% [33].…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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“…Polar optical phonon scattering has been generally proposed as the main contributor to phonon scattering in In2O3. [18,19] Using the approximation for polar optical phonon scattering,   T -p , we determined 0.24 < p ≤ 0.45 for the annealed IZRO sample (Figure 2d). This is lower than the p = 2.2 reported for unintentionally doped epitaxially grown In2O3 films.…”

Section: Figure 2cmentioning

confidence: 99%

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Aydın

Bastiani

Yang

et al. 2019

Adv Funct Materials

140

145

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Parasitic absorption in transparent electrodes is one of the main roadblocks to enable power conversion efficiencies (PCEs) for perovskite-based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, we show the excellent properties of Zr-doped indium oxide (IZRO) transparent electrodes for such applications, with improved near-infrared (NIR) response, compared to conventional In-doped tin oxide (ITO) electrodes. Optimized IZRO films feature a very high electron mobility (up to ~77 cm 2 /V•s), enabling highly infrared transparent films with very low sheet resistance (~18 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ~5% for IZRO within the solar spectrum (250-2500 nm range), to be compared with ~10% for commercial ITO. Fundamentally, we find that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr-doping. Overall, on four-terminal perovskite/silicon tandem device level, we obtained an absolute 3.5

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“…This causes the reduced oxygen content in the surface region, resulting in the formation of oxygen vacancies. 54 While the temperature within the film is high enough, oxygen atoms remain mobile, and they continue to be drawn towards this region resulting in the final increased oxygen gradient within the film. In the oxidising environment, however, the oxygen atoms that escape at the surface are quickly replaced with oxygen atoms from within the pressurised chamber.…”

Section: Reflecting the Oxygen Gradient In The Ellipsometric Modelmentioning

confidence: 99%

“…Finally, it is important to note that annealing in hydrogen has a potential to promote hydrogen doping within the lattice. 54,55 This has been proposed to be a shallow donor that is more energetically favourable than oxygen vacancies. 56 The effect of H-doping during ReLA in 5% H2 in N2 may further enhance the carrier concentration modulation, but analysis of this mechanism is beyond the scope of this work.…”

Section: Reflecting the Oxygen Gradient In The Ellipsometric Modelmentioning

confidence: 99%

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

Hillier

Patsalas

Karfaridis

et al. 2022

Preprint

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Transparent conductive oxides are appealing materials for optoelectronic and plasmonic applications as, amongst other advantages, their properties can be modulated by engineering their defects. Optimisation of this adjustment is, however, a complex design problem. This work examined the modification of the carrier transport properties of sputtered tin-doped indium oxide (ITO) via laser annealing in reactive environments. We relate the optical modifications to the structural, compositional, and electronic properties to elucidate the precise mechanisms behind the reactive laser annealing (ReLA) process. For sufficiently high laser fluence, we reveal an ambient-dependent and purely compositional modulation of the carrier concentration of ITO thin films. Hereby, we demonstrate that ReLA utilises the precise energy delivery of photonic processing to enhance the carrier mobility and finely tune the carrier concentration without significantly affecting the crystal structure. Exploitation of this phenomena may enable one to selectively engineer the optoelectronic properties of ITO, promising an alternative to the exploration of new materials for optoelectronic and photonic applications.

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Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Cited by 17 publications

References 50 publications

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing

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