2021
DOI: 10.1016/j.apsusc.2021.150316
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Carrier selective MoOx/Si heterojunctions: Role of thickness

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Cited by 8 publications
(7 citation statements)
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“…Additionally, the sharp drop in the transmittance spectra at 400 nm indicates MoO 3 's fundamental absorption edge, arising from the band gap, which matches well with values reported in pre-existing studies. [21,22] The transmittance and absorption spectra of the MoO 3 /glass samples after Au-NP deposition are presented in Figure 1b and Figure S2a (Supporting Information). The spectra showed a reduction in the transmittance in the visible region after the Au NPs deposition.…”
Section: Resultsmentioning
confidence: 99%
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“…Additionally, the sharp drop in the transmittance spectra at 400 nm indicates MoO 3 's fundamental absorption edge, arising from the band gap, which matches well with values reported in pre-existing studies. [21,22] The transmittance and absorption spectra of the MoO 3 /glass samples after Au-NP deposition are presented in Figure 1b and Figure S2a (Supporting Information). The spectra showed a reduction in the transmittance in the visible region after the Au NPs deposition.…”
Section: Resultsmentioning
confidence: 99%
“…This enhancement reveals that the sensitivity is much higher due to AC-PV effect in comparison to conventional PV effect. Meanwhile, the rise time (τ r , which is defined as a change in the photocurrent from 10% to 90%) and fall time of the device (τ f , known as a change in the photocurrent from 90% to 10%) were calculated under self-powered conditions; [9,21] τ r and τ f values were found to be 35 and 48 ms, respectively (Figure 2f). The observed difference in rise and fall times is associated with the generation and recombination rate of the photogenerated charge carriers.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
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