Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Mizubayashi, Wataru; Yasuda, Naoki; Okada, Kenji; Ota, Hiroyuki; Hisamatsu, H.; Iwamoto, Kunihiko; Tominaga, Koji; Yamamoto, Katsuhiko; Horikawa, Tsuyoshi; Nabatame, Toshihide; Satake, Hideki; Toriumi, Akira

doi:10.1016/j.microrel.2004.12.016

Cited by 11 publications

(6 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11][12][13] Figure 1 is a schematic illustration of carrier separation and four-point wafer bending. [11][12][13] Figure 1 is a schematic illustration of carrier separation and four-point wafer bending.…”

Section: Methodsmentioning

confidence: 99%

Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Choi

Numata

Nishida

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inFluorine implantation for effective work function control in p -type metal-oxide-semiconductor high-k metal gate stacks J. Vac. Sci. Technol. B 29, 01A905 (2011); 10.1116/1.3521471 Low temperature mobility in hafnium-oxide gated germanium p -channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 91, 263512 (2007); 10.1063/1.2828134 Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Strain-induced changes in the gate tunneling currents in p -channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 88, 052108 (2006); 10.1063/1.2168671Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in pmetal-oxide-semiconductor field-effect transistors Uniaxial four-point wafer bending stress-altered gate tunneling currents are measured for germanium ͑Ge͒/silicon ͑Si͒ channel metal-oxide-semiconductor field-effect transistors ͑MOSFETs͒ with HfO 2 / SiO 2 gate dielectrics and TiN/ P+ poly Si electrodes. Carrier separation is used to measure electron and hole currents. The strain-altered hole tunneling current from the p-type inversion layer of Ge is measured to be ϳ4 times larger than that for the Si channel MOSFET, since the larger strain-induced valence band-edge splitting in Ge results in more hole repopulation into a subband with a smaller out-of-plane effective mass and a lower tunneling barrier height. The strain-altered electron tunneling current from the metal gate is measured and shown to change due to strain altering the metal work function as quantified by flatband voltage shift measurements of Si MOS capacitors with TaN electrodes.

show abstract

Section: Methodsmentioning

confidence: 99%

Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Choi

Numata

Nishida

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Transconductance degradation (Δg m ) due to TG at or very close to the Si/IL interface and its correlation to ΔV T is extracted from transfer IV measured in MSM mode. Stress Induced Leakage Current (SILC) during PBTI stress, presumably due to TG near the IL/HK interface [13] or in the HK bulk [14], is measured using carrier separation technique [15] in MSM mode. Process induced (pre-stress) gate insulator traps in N and P MOSFETs (that facilitates TP) are estimated using flicker noise [5], [16], [17].…”

Section: Bti Measurement and Analysismentioning

confidence: 99%

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

Joshi

Hung²,

Mukhopadhyay

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

View full text Add to dashboard Cite

NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to ∼ 6Å and fabricated using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT, proposed stacks provide improved NBTI and similar PBTI when compared to conventional Chem-Ox IL based HKMG stacks. EOT scaling achieved by RTP thermal IL scaling shows lower rate of increase in NBTI and PBTI when compared to Chem-Ox IL scavenged stacks. Impact of Nitrogen and role of post HK nitridation are studied. Physical mechanism of improved BTI in proposed stacks is discussed in detail.

show abstract

“…1 eV below the conduction band edge which facilitate electron transfer into the conduction band. 1,2 However, hole conduction has also been reported in HfO 2 and TiO 2 , 3 and hence it was postulated that a hole current may be induced via injection from the Si to the TiO 2 surface, and that this would be facilitated by rendering the metal overlayer on the TiO 2 negative. By fabricating the metal overlayer in the form of a grid, holes may be generated at the open surface of the TiO 2 and such carriers may be available for reactions in an external fluid.…”

mentioning

confidence: 99%

A novel electrochemical device for the disinfection of fluids by OH radicals

et al. 2006

View full text Add to dashboard Cite

show abstract

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Cited by 11 publications

References 22 publications

Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

A novel electrochemical device for the disinfection of fluids by OH radicals

Contact Info

Product

Resources

About