2023
DOI: 10.1039/d2nr05351a
|View full text |Cite
|
Sign up to set email alerts
|

Carrier separation in type-II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowires

Abstract: Quantum dots consisting of an axial Zn0.97Mg0.03Te insertion inside a large bandgap Zn0.9Mg0.1Te nanowire cores are fabricated in a molecular beam epitaxy system by employing the vapor-liquid-solid growth mechanism. Additionally,...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 54 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?