Carrier thermal escape and retrapping in self-assembled quantum dots

Sanguinetti, S.; Henini, M.; Alessi, M. Grassi; Capizzi, M.; Frigeri, P.; Franchi, S.

doi:10.1103/physrevb.60.8276

Cited by 334 publications

(277 citation statements)

References 21 publications

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“…A variety of carrier redistribution effects caused by temperature has been investigated in QD ensembles. [4][5][6][7][8][9][10][11][12][13][14][15] It is commonly accepted that the sigmoidal evolution of the peak energy and full width at half maximum of the PL bands is due to carrier promotion from small QDs to larger ones. 6 Therefore, quantum dot size distributions, carrier capture, relaxation, and re-trapping among QDs of different sizes had to be considered to model correctly the QD recombination dynamics.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6][7][8][9][10][11][12][13][14][15] It is commonly accepted that the sigmoidal evolution of the peak energy and full width at half maximum of the PL bands is due to carrier promotion from small QDs to larger ones. 6 Therefore, quantum dot size distributions, carrier capture, relaxation, and re-trapping among QDs of different sizes had to be considered to model correctly the QD recombination dynamics. 2,6 These models reveal new effects like the competition between band narrowing by thermal escape processes and band broadening due to exciton-phonon interactions, 7,16 or the role of the wetting layer (WL) continuous states as a mediator for carrier diffusion.…”

Section: Introductionmentioning

confidence: 99%

“…6 Therefore, quantum dot size distributions, carrier capture, relaxation, and re-trapping among QDs of different sizes had to be considered to model correctly the QD recombination dynamics. 2,6 These models reveal new effects like the competition between band narrowing by thermal escape processes and band broadening due to exciton-phonon interactions, 7,16 or the role of the wetting layer (WL) continuous states as a mediator for carrier diffusion. 4,6,8,9,11,[17][18][19][20] The thermally activated escape mechanism initiates the temperature dynamics and therefore has deserved a lot of attention in the past.…”

Section: Introductionmentioning

confidence: 99%

“…2,6 These models reveal new effects like the competition between band narrowing by thermal escape processes and band broadening due to exciton-phonon interactions, 7,16 or the role of the wetting layer (WL) continuous states as a mediator for carrier diffusion. 4,6,8,9,11,[17][18][19][20] The thermally activated escape mechanism initiates the temperature dynamics and therefore has deserved a lot of attention in the past. It has been investigated attending to the available final states, i.e., QD excited states, 15,21 wetting layer, 4,6,7,13,20,22 GaAs barrier, 8,9,23 and impurity/defect levels.…”

Section: Introductionmentioning

confidence: 99%

“…4,6,8,9,11,[17][18][19][20] The thermally activated escape mechanism initiates the temperature dynamics and therefore has deserved a lot of attention in the past. It has been investigated attending to the available final states, i.e., QD excited states, 15,21 wetting layer, 4,6,7,13,20,22 GaAs barrier, 8,9,23 and impurity/defect levels. [23][24][25][26] Thermal escape can be also investigated attending to the nature of the particles being promoted to a higher energy state.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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Radiative Recombination Features of Metastable Quantum Dot Array

Talalaev

Novikov

Gobsch

et al. 2001

phys. stat. sol. (b)

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Metastable quantum dot (QD) arrays were grown by submonolayer migration enhanced epitaxy (SMEE) mode on GaAs(100) singular and vicinal substrates. It has been established that two QD groups are formed on the vicinal surface. These groups --conjunct QDs (CQD) and isolated QDs (IQD) --demonstrate a basically different behavior in their photoluminescence spectra. The CQDs form chain-like structures. They lay on the wetting layer which connects them to each other. The IQDs are formed due to wetting layer rupture directly on the GaAs surface at the terrace edges. They are isolated and not connected to the rest QD array.Introduction The morphological stability of QDs which have square base shape and are organized as a dense 2D square lattice array is well established [1, 2]. It has been also shown that for a small area covered by islands the energy gain by forming a square lattice is negligible. As a consequence, a morphologically metastable QD array with another lateral ordering and a different base shape becomes possible [1,2].At present, most investigations concerning the QD problem deal with the high-density stable QD array. But it is also known that metastable QDs can show better defined zero-dimensional properties as compared to stable QD arrays [3]. Narrowing of the radiative recombination band down to unprecedently low values [4] provides a possibility for device application in spite of their liability to ripening.Here a question inevitably arises: how can the mechanisms forming QD photoluminescence (PL) be identified? The multimodal structure of QD PL spectra is mainly formed by two mechanisms: recombination through excited states and from QD groups of different origin [5]. Often these mechanisms are relevant at the same time. Thus, their separation from each other is of utmost interest.

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Thermal Carrier Escape and Capture in CdTe Quantum Dots

Maćkowski

Kyrychenko

Karczewski

et al. 2001

phys. stat. sol. (b)

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We studied optical properties of CdTe quantum dots (QDs) by steady-state and time-resolved photoluminescence spectroscopy. By changing the excitation power at high temperatures (about T = 70 K) we can significantly influence the distribution of excitons within the quantum dot ensemble. The effect manifests itself by a large (100 meV) red shift of the PL emission energy when the excitation power decreases by five orders of magnitude. This red shift is accompanied by a decrease of the linewidth of the emission band. We discuss these effects in the frame of a model of thermally induced redistribution of carriers between the zero-dimensional electronic states within the quantum dot ensemble. Moreover, we found that the exciton decay time of the QD emission increases dramatically when the number of excitons injected into the system is reduced.

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Carrier thermal escape and retrapping in self-assembled quantum dots

Cited by 334 publications

References 21 publications

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Radiative Recombination Features of Metastable Quantum Dot Array

Thermal Carrier Escape and Capture in CdTe Quantum Dots

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