Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Tomer, Dushyant; Rajput, Swati; Hudy, Lawrence; Li, C. H.; Li, L.

doi:10.1063/1.4919727

Cited by 35 publications

(21 citation statements)

References 38 publications

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“…The high value of standard deviation σ = 0.218 eV indicates an inhomogeneous barrier. Inhomogeneities can be ascribed to (a) spatial inhomogeneity of the graphite contact, which contains irregular nanoscale flakes with sizes of tens of nanometers and (b) SiC substrate surface steps and irregularities .The standard deviation corresponds well with the value of 0.180 V reported for the graphene/SiC junction .…”

Section: Resultssupporting

confidence: 72%

“…it is possible to show that the barrier height is a function of the reverse bias and that the barrier height decreases with increasing reverse bias. As presented by Tomer et al such behavior can be explained by electric‐field enhanced thermionic emission and Pool–Frenkel emission mechanism. Considering the Pool Frenkel emission the reverse current is be given by:

I \sim E exp true(\frac{q}{k T} \sqrt{\frac{q E}{π ϵ_{normals}}} true)

where E is the applied electric field and ϵ s is the dielectric constant.…”

Section: Resultsmentioning

confidence: 75%

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Graphite/SiC junctions and their electrical characteristics

Yatskiv

Grym

2017

Phys. Status Solidi A

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284 680 222 Current-voltage characteristics of rectifying graphite/SiC junctions are investigated in a wide temperature range. The main parameters of the diodes, the ideality factor, and the Schottky barrier height show strong temperature dependence.Such behavior is interpreted on the basis of standard thermionic emission theory assuming Gaussian distribution of the barrier heights due to inhomogeneity at the graphite/SiC interface.

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Section: Resultssupporting

confidence: 72%

I \sim E exp true(\frac{q}{k T} \sqrt{\frac{q E}{π ϵ_{normals}}} true)

where E is the applied electric field and ϵ s is the dielectric constant.…”

Section: Resultsmentioning

confidence: 75%

Graphite/SiC junctions and their electrical characteristics

Yatskiv

Grym

2017

Phys. Status Solidi A

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“…The current increases with the temperature increasing from 253 K to 353 K. In HRS, the current is small in both positive and negative bias range showing head-to-head diode behavior as the Schottky-like barriers form at both top and bottom interface 36 . The reversed diode current can be governed by Poole-Frenkel emission 44 , Schottky emission 44 or modified Schottky emission mechanisms 45 . The corresponding emission coefficients ( Supplementary information, Figure S9-S10 and Table S1 ) suggest that electric conduction under reverse bias condition is consistent with the modified Schottky emission which is described by the modified Richardson-Schottky equation 45 :…”

Section: Resultsmentioning

confidence: 99%

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes

You

Niu

et al. 2015

Sci Rep

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BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.

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“…Combining these two materials (graphene and SiC) and considering a strong ability of graphene to interact with different substances, it is possible to use sensitive graphene/SiC Schottky junctions to identify different analytes [34]. The charge transfer between heavy metals and graphene can cause a shift of the Fermi level of graphene with respect to the Dirac point, thereby changing the Schottky barrier height and, as a consequence, changing the current–voltage characteristics, which can be used as the sensor signal.…”

Section: Introductionmentioning

confidence: 99%

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Shtepliuk¹,

Eriksson²,

Khranovskyy³

et al. 2016

Beilstein J. Nanotechnol.

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A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

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Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Cited by 35 publications

References 38 publications

Graphite/SiC junctions and their electrical characteristics

Graphite/SiC junctions and their electrical characteristics

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

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