Carrier transport mechanism of Se/n-type Si Schottky diodes

Janardhanam, V.; Park, Yang-Kyu; Ahn, Kwang–Soon; Choi, Chel‐Jong

doi:10.1016/j.jallcom.2012.04.031

Cited by 23 publications

(11 citation statements)

References 24 publications

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“…At high temperatures, there are possible inhomogeneities in the interface layer thickness and non-uniformities of the interfacial charges [26]. Other authors have attributed these to changes in carrier transport mechanisms that is recombination-generation in the space charge region and tunnelling in the barrier [10,27,28]. The variation of with temperature has also been linked to changes in the band gap [14].…”

Section: Resultsmentioning

confidence: 99%

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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In this study, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80 -480 K.The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I-V barrier height and C-V barrier height were found to be n = 1.10, = 0.85 eV and = 0.96 eV, respectively. increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I-V characteristics that degrade permanently above 300 K. Permanent changes to the C-V characteristics were observed only above 400 K. We also noted a discrepancy in the C-V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the versus temperature curve into two regions with temperature coefficients -6.9×10 -4 eV/K and -2.2×10 -4 eV/K above and below 400 K.

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Section: Resultsmentioning

confidence: 99%

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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“…In search of metal-semiconductor or Schottky contacts having large barrier heights, Janardhanam et al [1][2][3] and Reddy et al [4][5][6] published a series of articles on electronic properties of interfaces between amorphous and crystalline selenium layers and n-type Ge, Si, and GaN substrates. They selected selenium since it has a photothreshold of 5.9 eV [7], the largest value of all solid chemical elements [8].…”

Section: Introductionmentioning

confidence: 99%

“…However, crystalline as well as amorphous selenium is a ptype semiconductor [9,10]. Janardhanam et al [1][2][3] and Reddy et al [4][5][6] thus fabricated p-Se/n-Ge, p-Se/n-Si, and p-Se/n-GaN heterojunctions rather than Schottky contacts. Therefore, some of their experimental data will be reanalyzed.…”

Section: Introductionmentioning

confidence: 99%

On selenium p–n heterojunctions and Schottky contacts

Mönch

2014

J Mater Sci: Mater Electron

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Experimental capacitance-voltage data of selenium p-n heterojunctions on n-type Ge, Si, and GaN and flat-band barrier heights of selenium Schottky contacts are reanalyzed. The resulting built-in potentials of the p-n heterojunctions as well as the flat-band barrier heights of the Schottky contacts are explained by the well established concept of interface-induced gap states (IFIGS) where the interfacial electric dipoles are estimated by using the differences of the respective electronegativities. The analysis of the built-in potentials of the heterojunctions between crystalline p-Se films and n-Si and n-GaN substrates give an energy distance of 0.06 eV between the bulk Fermi level and the branch point of the IFIGS. The evaluation of the Schottky barrier heights reveals the IFIGS branch point of crystalline selenium to lie 0.03 ± 0.15 eV above the valence-band maximum. In summary, the valence-band offsets of c-Se/Si and c-Se/ GaN heterostructures are estimated as 0.29 and 2.22 eV, respectively.

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“…13,14) Therefore, the detailed knowledge of Schottky contacts under annealing process will be helpful in understanding and controlling electrical properties of Schottky diodes. 15) In the present work, in continuation to our previous work, 12) the authors investigated the effect of rapid thermal annealing (RTA) on the electrical and structural properties of Se Schottky contacts to n-type Si. It will be shown that Schottky barrier height of Se/n-type Si Schottky contacts strongly depends on the crystallization behavior of Se films caused by RTA process.…”

Section: Introductionmentioning

confidence: 94%

“…11) Nevertheless, the attempt for the implementation of Se into Schottky rectifier is extremely limited at this moment. Very recently, Janardhanam et al 12) fabricated Se/n-type Si Schottky diodes and investigated its electrical characteristics and the carrier transport mechanism at room temperature using currentvoltage (IV) and capacitancevoltage (CV) measurements. They showed that the thermionic emission and Schottky barrier lowering mechanisms dominate the current transport in the forward and reverse biases, respectively.…”

Section: Introductionmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

et al. 2013

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We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100200°C for 30 s under N 2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing at 200°C. With increasing RTA temperature, the crystallization of the Se film proceeded and the film was fully crystallized after being annealed at 200°C without the reaction between Se film and Si substrate. The decrease in the barrier height of Se Schottky contacts to n-type Si with increasing RTA temperature could be associated with the decrease in series resistance caused by the phase transformation from high resistance amorphous Se to low resistance crystalline Se. An investigation of the reverse currentvoltage characteristics of Se/n-type Si Schottky contacts showed that the Schottky emission mechanism dominates the current transport in the reverse bias at all annealed temperatures in the range of 100200°C.

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Carrier transport mechanism of Se/n-type Si Schottky diodes

Cited by 23 publications

References 24 publications

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

On selenium p–n heterojunctions and Schottky contacts

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

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