Carrier transport mechanisms and photodetector characteristics of Ag/TiOPc/p-Si/Al hybrid heterojunction

Afify, Hany A.; El-Nahass, M.M.; Gadallah, A.–S.; Khedr, Mohamed Atta

doi:10.1016/j.mssp.2015.05.026

Cited by 21 publications

(4 citation statements)

References 66 publications

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“…To outcomes have been reported by different researchers. 4,36,[39][40][41] The calculated values for A* are importantly different from the theoretical value 112 Acm −2 K −2 for n-Si 3 . As the reason for this situation, Horwarth 42 reported that the value of A* determined from the temperature-dependent I-V measurements was laterally changed by the barrier inhomogeneity.…”

Section: Resultscontrasting

confidence: 64%

“…[1][2][3] In recent studies, MIS or MOS type structures have been created by growing organic materials between metal and semiconductor with different techniques. [4][5][6][7] In all these structures, the most basic electrical parameters of the structure are the ideality factor and the Schottky barrier height. As known, for the improvement of reliability and performance of the structures is highly important to produce high quality Schottky barrier diodes.…”

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confidence: 99%

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The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

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Section: Resultscontrasting

confidence: 64%

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confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…This is due to the similar resistance values between the ITO film and the Al-metal contact [10]. A significantly improved result was obtained from the hybrid-ITO device for the τ UV−On value of 1.6 ms, which outperforms other Si-based photodetectors [4,11,23,24] and is a further enhancement over organic devices [25].…”

Section: Resultsmentioning

confidence: 84%

Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

Kim

Lee

Kim

2018

Journal of Nanomaterials

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A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.

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“…However, TiOPc’s poor light absorption capability, especially when compared with semiconductor materials like amorphous silicon (a-Si) commonly used in light-driven microfluidics [ 41 , 48 , 49 , 58 , 59 ], posed a challenge. This limitation is attributed to its restricted charge carrier mobility and low exciton diffusion length at the donor/acceptor interface [ 60 , 61 , 62 , 63 ]. As a result, most incoming rays pass through the TiOPc layer without significantly contributing to its photoconductivity, as depicted in Figure 1 b, leading to poor ODEP performance.…”

Section: An Overview Of a Light-driven Dep Droplet Manipulation Platformmentioning

confidence: 99%

Optimizing Optical Dielectrophoretic (ODEP) Performance: Position- and Size-Dependent Droplet Manipulation in an Open-Chamber Oil Medium

Islam,

Park

2024

Micromachines

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An optimization study is presented to enhance optical dielectrophoretic (ODEP) performance for effective manipulation of an oil-immersed droplet in the floating electrode optoelectronic tweezers (FEOET) device. This study focuses on understanding how the droplet’s position and size, relative to light illumination, affect the maximum ODEP force. Numerical simulations identified the characteristic length (Lc) of the electric field as a pivotal factor, representing the location of peak field strength. Utilizing 3D finite element simulations, the ODEP force is calculated through the Maxwell stress tensor by integrating the electric field strength over the droplet’s surface and then analyzed as a function of the droplet’s position and size normalized to Lc. Our findings reveal that the optimal position is xopt= Lc+ r, (with r being the droplet radius), while the optimal droplet size is ropt = 5Lc, maximizing light-induced field perturbation around the droplet. Experimental validations involving the tracking of droplet dynamics corroborated these findings. Especially, a droplet sized at r = 5Lc demonstrated the greatest optical actuation by performing the longest travel distance of 13.5 mm with its highest moving speed of 6.15 mm/s, when it was initially positioned at x0= Lc+ r = 6Lc from the light’s center. These results align well with our simulations, confirming the criticality of both the position (xopt) and size (ropt) for maximizing ODEP force. This study not only provides a deeper understanding of the position- and size-dependent parameters for effective droplet manipulation in FEOET systems, but also advances the development of low-cost, disposable, lab-on-a-chip (LOC) devices for multiplexed biological and biochemical analyses.

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Carrier transport mechanisms and photodetector characteristics of Ag/TiOPc/p-Si/Al hybrid heterojunction

Cited by 21 publications

References 66 publications

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

Optimizing Optical Dielectrophoretic (ODEP) Performance: Position- and Size-Dependent Droplet Manipulation in an Open-Chamber Oil Medium

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