Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Currò, Giuseppe; Camalleri, M.; Calì, D.; Monforte, Francesca; Neri, F.

doi:10.1016/j.microrel.2007.01.015

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…At these depths, an influence of carrier trapping defects on oxide quality, with different roles played by hole and electron traps, can be expected, as known from consolidated literature data 18 and also from indications found in a preliminary electrical characterization analysis on these samples. 19…”

Section: G136mentioning

confidence: 99%

Reoxidization Process Effects on the Nitrogen Bonding Configurations in SiO[sub x]N[sub y] Power MOSFET Dielectric Gate

Fazio

Monforte

Neri

et al. 2008

J. Electrochem. Soc.

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The structural properties of silicon oxynitride films used at the gate dielectrics interface in Power vertically diffused metal oxide semiconductor technologies have been studied by means of X-ray photoelectron spectroscopy. An overall picture of the interface chemistry evolution as a function of the growth parameters in relation to the effects of the postgrowth reoxidation process is reported. The films were grown in an N 2 O environment at temperatures higher than 900°C and subsequently reoxidized at 1000°C in a dry oxygen environment. The results show that the chemistry of the oxynitride layer progressively changes by moving toward the silicon interface and, after the reoxidation process, the interface chemical configurations are strongly affected by the initial specific oxynitridation process. In particular, the application of the final reoxidation plays a significative role in determining the distribution of the oxidized O-N-Si 2 bonds near the interface.

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Section: G136mentioning

confidence: 99%

Reoxidization Process Effects on the Nitrogen Bonding Configurations in SiO[sub x]N[sub y] Power MOSFET Dielectric Gate

Fazio

Monforte

Neri

et al. 2008

J. Electrochem. Soc.

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Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Currò¹,

Camalleri²,

Calì³

et al. 2007

Microelectronics Reliability

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Fazio

Neri

Camalleri

et al. 2008

Applied Physics Letters

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Correlations between the interface states and trap densities, in particular, the defect types that may be more or less strongly involved in power vertically diffused metal oxide semiconductor reliability performances, and the fine interface chemistry of the Ox–N–Siy bonds have been studied. The oxide preparation process is extracted from an STMicroelectronics proprietary standard for low voltage vertically diffused power metal oxide semiconductor field effect transistors with logic level gate driving. The oxynitride films were grown in N2O environment at temperatures equal to or higher than 900 °C and optionally subjected to a 1000 °C short annealing. Informations about the sample stoichiometry and the nitrogen bonding configurations were obtained by means of x-ray photoelectron spectroscopy. The results show that some peculiar linear and antilinear correlations exist between carrier traps across the oxide or at its interface and the amount of specific nitrogen bonding configurations. In particular, the role of the substitutional N(–SiO3)x bond as a marker of the electrical quality of Si/SiO2 interface is highlighted.

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Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Cited by 3 publications

References 5 publications

Reoxidization Process Effects on the Nitrogen Bonding Configurations in SiO[sub x]N[sub y] Power MOSFET Dielectric Gate

Reoxidization Process Effects on the Nitrogen Bonding Configurations in SiO[sub x]N[sub y] Power MOSFET Dielectric Gate

Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

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