Carrier tunneling in complex asymmetrical multiple-quantum-well semiconductor optical amplifiers

Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

“…Both electrons and holes are good localized in the lowest states and rather delocalized in the excited states. Therefore, we expect faster tunneling in energy range corresponding to the higher excited states, which is confirmed by calculation of tunneling times within the group velocity concept [7], [8]. The results of tunneling time calculation represented in Fig.4 by red dashed curve.…”

“…It seems to be natural to change QWs' geometry to make each of them effective just for one of these processes. So, the structure becomes asymmetrical [7], [8]. We propose two different designs.…”

Simulation of Active Regions of Semiconductor Lasers and Optical Amplifiers based on Quantum Wells

“…Fig. 6 demonstrates clearly this fact [10]. Calculations have been made using group velocity conception.…”

“…Fig. 7 shows comparison of experimental gain spectrum and pump-probe traces to those calculated taking tunneling into account [10].…”

Microscopic statistical theory of Inhomogeneous broadening in InGaN/GaN quantum wells

“…Resulted expression contains spectral power density of 2D random surface describing potential fluctuations as quantum well interfaces. We expect that results obtained here will have an impact on calculation of gain spectra of either asymmetric MQW heterostructures [15], [16] or conventional QWs with digital alloy barriers [17], because starting point in that case is band diagram [18]. It should also influence results on nonlinear gain [19], and, possibly, on Auger recombination rate in QWs [20].…”