Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

Khutsishvili, Elza; Kvirkvelia, Bella; Kekelidze, David; Aliyev, Vügar; Khomasuridze, David; Gabrichidze, L. L.; Guguchia, Zurab; Kekelidze, Nodar

doi:10.1063/1.4848306

Cited by 2 publications

(4 citation statements)

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“…Comparison of experimental data of mobility in the InAs, containing an impurity in the range of 10 16 -10 19 cm -3 with the theoretical ones shows that, of all possible scattering mechanisms in InAs, the only combination of scattering on ionized impurities and optical phonons explains the experimental results in the temperature range. [8][9][10] The share of contribution of these scattering mechanisms into the total scattering is different at various temperatures and electrons concentration.…”

Section: Resultsmentioning

confidence: 99%

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Numerical Calculations of Impurity Scattering Mobility in Semiconductors

Chubinishvili¹,

Kobaidze²,

Khutsishvili³

et al. 2019

ECB

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Novel semiconductor-base nanotechnology is gradually moving into new applications in the world economy. Semiconductor application requires increasing of investigations in the direction of their properties. The primary criterion of semiconductor suitability for use in semiconductor devices is its electrical properties, particularly current carriers mobility. Therefore, the problem connected with the explanation of the experimental results of current carriers mobility on the base of theoretical formulas is very urgent. In the present paper current carriers mobility due to ionized impurity scattering is discussed and calculated using numerical methods. Calculations have been done for different temperatures and different range of current carriers concentration in InAs.

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Section: Resultsmentioning

confidence: 99%

“…To calculate mobility (1) it is necessary to calculate another unknown parameter η which is in (3) equitation and it needs to solve transcendental equation (9) to find the value of η :…”

Section: Methodsmentioning

confidence: 99%

Numerical Calculations of Impurity Scattering Mobility in Semiconductors

Chubinishvili¹,

Kobaidze²,

Khutsishvili³

et al. 2019

ECB

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“…[82] There are two main reasons for the introduction of dislocations during the growth of monocrystalline silicon ingots: dislocation heredity in seed crystals and stress introduction. [83] When seed crystals contain dislocations and dislocations outcrop on the growth surface, the dislocations will extend from the seed crystals to the newly grown crystals with the crystal growth until they intersect the crystal surface because dislocations cannot be interrupted in the crystal, which is called dislocation heredity. Dislocation heredity will only increase the length of dislocation lines but not the number of dislocation lines.…”

Section: Monocrystalline Si Growth By the Cz Processmentioning

confidence: 99%

Section: Strategies To Reduce the Adverse Effects Of Dislocation In S...mentioning

confidence: 99%

Dislocations in Crystalline Silicon Solar Cells

Wang,

Liu,

et al. 2023

Adv Energy and Sustain Res

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Dislocation is a common extended defect in crystalline silicon solar cells, which affects the recombination characteristics of solar cells by forming deep‐level defect states in the silicon bandgap, thereby reducing the lifetime of minority carrier. Hence, reducing the impact of defects on device performance is an effective strategy to optimize the performance of photovoltaic devices. This article reviews the observation and engineering of dislocation in Si solar cell. The structure and deformation of Si can be directly observed by chemical etching combined with electron microscopy. Also, more information about dislocation is obtained indirectly by monitoring the electrical and optical properties of Si. The classification, density, distribution of dislocations, and their interactions with other defects in Si can affect the lifetime of minority carriers and thereby reduce the performance of Si solar cells. In order to achieve higher cell efficiency, crystals with less or even no dislocation should be obtained. In addition to the specification of controlling the relevant parameters during the growth of silicon ingots to obtain the minimum dislocation density, it is necessary to study the behavior of dislocation in Si wafers under the combined action of external stress, temperature, and other defects.

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Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

Cited by 2 publications

References 1 publication

Numerical Calculations of Impurity Scattering Mobility in Semiconductors

Numerical Calculations of Impurity Scattering Mobility in Semiconductors

Dislocations in Crystalline Silicon Solar Cells

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