Carriers temperature for an operating silicon p–n junction

Boukhatem, M. H.; Tahchi, Mario El; Moussa, G. W. El Haj; Ajaka, M.; Khoury, A.; Mialhe, P.

doi:10.1016/j.mejo.2007.02.002

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…For higher lattice temperatures (T > 60 K), the dependence of the hot carriers temperature on the lattice temper ature is nearly linear to a good approximation. Similar behavior was detected also in other materials like PbS quantum dots [21], in GaSb-based multi quantum wells [22], in GaAs 1−x N x [23], and in Si [24]. Hot carriers would usually quickly undergo carrier-phonon (mostly LO-phonons) interaction and release the excess energy above the bandgap as lattice vibration through emission of phonons on the order of picoseconds.…”

Section: Temperature Dependence Of Pl Emission and Carrier Localizati...supporting

confidence: 73%

Observation of band gap fluctuations and carrier localization in Cu₂CdGeSe₄

Krustok

Raadik

Kaupmees

et al. 2019

J. Phys. D: Appl. Phys.

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Excitation power and temperature dependences of the steady-state photoluminescence (PL) spectra are studied in polycrystalline Cu 2 CdGeSe 4 (CCGSe) containing a mixture of orthorhombic and tetragonal phases. The low-temperature excitation power dependences of the PL peak shape with a peak position at about 1.17 eV indicate a state filling effect. Reflectivity measurements revealed band gap energies 1.257 eV and 1.223 eV at 10 K and 300 K, respectively. The temperature dependences of the peak energy and linewidth showed a 'S-shaped' and 'V-shaped' behavior, respectively, and are well explained by the localized carriers model where band gap fluctuations play a crucial role. The asymmetric PL band shape analysis indicates the presence of hot carriers having a temperature about 75 K higher than the lattice temperature. It is shown that the low-temperature PL emission is due to recombination of localized electrons with holes captured by the deep acceptor defect Cu Cd with a depth E A = 80 meV.

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Section: Temperature Dependence Of Pl Emission and Carrier Localizati...supporting

confidence: 73%

Observation of band gap fluctuations and carrier localization in Cu₂CdGeSe₄

Krustok

Raadik

Kaupmees

et al. 2019

J. Phys. D: Appl. Phys.

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“…58 The Indonesian FinTech Association, one of the major FinTech players, was founded in 2015 to deal with the financial transactions linked with modern technology. 59 Simultaneously, FinTech was also embraced by Islamic financial institutions by applying various digital instruments in routine financial transactions to facilitate their consumers. 60 However, regardless of the tremendous importance of Islamic FinTech and digital assets, Islamic financial institutions lack a consolidated set of laws and regulations formulated by BI or OJK.…”

Section: The Adoption Of Islamic Fintech As Digital Assets and Their ...mentioning

confidence: 99%