We study the inter-valley scattering induced by the repulsive Coulomb interaction as a purely electronic mechanism for the origin of superconductivity in few layers of graphene. This mechanism allows for the formation of valley-singlet/spin-triplet Cooper pairs and it is strongly favored by the presence of singularities in the density of states (DOS), the van Hove singularities, which are triggered by the flattening of the electronic bands. We consider three different hetherostructures based on graphene: twisted bilayer graphene (TBG), rhombohedral trilayer graphene (RTG) and Bernal bilayer graphene (BBG), where van Hove scenarios can be realized by tuning the twist angle and/or the elctronic density and/or an applied displacement field. We obtain trends and estimates of the superconducting (SC) critical temperature in agreement with the recent experimental findings, which might identify the inter-valley Coulomb scattering as a universal pairing mechanism in few layers of graphene. Our model is quite general and can be used to characterize and predict the SC transition in a wide variety of novel materials, obtained by engineering twists and stacks in multilayers of graphene.