Cascaded exciton emission of an individual strain-induced quantum dot

Schülein, Florian J. R.; Laucht, Arne; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; Finley, Jonathan J.; Wixforth, Achim; Krenner, Hubert J.

doi:10.1063/1.3216807

Cited by 8 publications

(10 citation statements)

References 18 publications

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supporting

confidence: 56%

“…The same explanation applies to the 2X-1X signals. In addition, the observed onset of the 1X decay is delayed by the sum of the 3X and 2X fall times consistent with a cascaded emission of single photons [23,25]. To further support these observations, we use a rate equation model to the system to reproduce the observed data.…”

Section: Cascaded Exciton Emissionmentioning

confidence: 74%

“…Our sample consists of SI-QDs, which are formed by the strain field induced by InP islands in a 4 nm wide In 0.1 Ga 0.9 As/GaAs quantum well, located 5 nm below the sample surface. The ensemble of 60-80 nm diameter InP stressors initially has an areal density of 3!10 9 cm -2 from which we select small sub-ensembles down to individual dots by selective removal of the surrounding islands using wet chemically using HCl and a mask defined by electron beam lithography [23]. This method allows for a precise control of the number of SI-QDs and we are able to perform spectroscopy on individual SI-QDs without using optical near-field or masking techniques.…”

Section: Isolation Of Defined Sub-ensembles and Individual Strain-indmentioning

confidence: 99%

“…In order to verify cascaded single photon emission we performed time-resolved PL spectroscopy on the three lowest exciton complexes, 1X, 2X and 3X. The 3X emission is detected ~ 15 nm blue-shifted compared to the 1X and 2X lines [23]. In these experiments, a single SI-QD was optically excited by a pulsed Ti:sapphire laser tuned to 818nm to resonantly excite the free exciton in the GaAs matrix.…”

Section: Cascaded Exciton Emissionmentioning

confidence: 99%

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Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

et al. 2010

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We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post these carriers are sequentially captured into the confined levels. Their radiative decays gives rise to the emission of a train of single photons. Three different approaches using (i) straininduced and (ii) self-assembled quantum dots, and (iii) self-assembled quantum posts are discussed and their application potential is discussed. First devices and initial experiments towards the realization of such an acoustically driven single photon source are presented and remote acoustically triggered injection into few individual emitters is demonstrated.

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supporting

confidence: 56%

Section: Cascaded Exciton Emissionmentioning

confidence: 74%

Section: Isolation Of Defined Sub-ensembles and Individual Strain-indmentioning

confidence: 99%

Section: Cascaded Exciton Emissionmentioning

confidence: 99%

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Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

et al. 2010

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“…In this scheme, electrons and holes are transported in the type-II potential modulation induced by the SAW and sequentially injected into a quantum dot (QD) which emits a single photon per SAW cycle [2]. Until now, this remote injection scheme has been investigated using QD systems of moderate optical quality or weak confinement potential such as QDs induced in surface-near QWs by stressor islands on the sample surface [3,4,5], interface fluctuation QDs in disordered quantum wires (QWRs) [6,7] or Indium-rich segments in GaAs nanowires (NWs) [8]. Photon correlation spectroscopy performed on sharp emission lines of localized QD-like emission centers in acoustically pumped QWRs and NWs revealed signatures of multiple emission centers contributing to the detected signals.…”

mentioning

confidence: 99%

Surface acoustic wave mediated carrier injection into individual quantum post nano emitters

Völk¹,

Knall²,

Schülein³

et al. 2012

Nanotechnology

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Acousto-electric charge conveyance induced by a surface acoustic wave (SAW) is employed to dissociate photogenerated excitons. Over macroscopic distances, both electrons and holes are injected sequentially into a remotely positioned, isolated and high quality quantum emitter, a self-assembled quantum post. This process is found to be highly efficient and to exhibit improved stability at high acoustic powers when compared to direct optical pumping at the position of the quantum post. These characteristics are attributed to the wide matrix quantum well in which charge conveyance occurs and to the larger number of carriers available for injection in the remote configuration, respectively. The emission of such pumped quantum posts is dominated by recombination of neutral excitons and fully directional when the propagation direction of the SAW and the position of the quantum post are reversed.

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High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Kim

Kumar

et al. 2022

ACS Nano

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Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect-and strain-induced singlephoton emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (∼150 emitters/um 2 ) in a WSe 2 monolayer. We induce strain inside the WSe 2 monolayer with high spatial density by conformally placing the WSe 2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources.

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Cascaded exciton emission of an individual strain-induced quantum dot

Cited by 8 publications

References 18 publications

Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

Surface acoustic wave mediated carrier injection into individual quantum post nano emitters

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

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