Casimir Pressure in MDS-Structures

Abstract

The Casimir pressure on the dielectric layer in metal-dielectric-semiconductor (MDS) structures is calculated in the framework of the Lifshitz theory at nonzero temperature. In this calculation the standard parameters of semiconductor devices with a thin dielectric layer are used. We consider the thickness of a layer decreasing from 40 to 1 nm. At the shortest thickness the Casimir pressure achieves 8 MPa. At small thicknesses the results are compared with the predictions of nonrelativistic theory.