Ferroelectric
modulation of the surface charge density is a promising
strategy to promote the surface oxygen evolution reaction (OER) in
photocatalytic water splitting. The limitations of the Sabatier principle
could be overcome by tuning the interaction strength between the OER
intermediates and the surface for the individual reaction steps via
switching of the polarization direction. InSnO2N, a newly
reported improper ferroelectric semiconductor, is promising for applications
as a photocatalyst due to its direct band gap of 1.61 eV and its sizable
ferroelectric polarization. Therefore, in this work, we use density
functional theory to investigate the OER performance on its (001)
surface as a function of the bulk polarization direction. We find
that the clean surface of the downward (negatively) polarized bulk
structure (“polarized bulk” henceforth) has a lower
theoretical overpotential of η = 0.58 V versus the standard
hydrogen electrode compared to the clean surface with an upward (positively)
polarized bulk structure (0.77 V). Under (photo)-electrochemical operating
conditions, a monolayer (ML) OH-covered surface is the most stable
for the negatively polarized bulk and shows a theoretical overpotential
of 0.89 V, whereas for the positively polarized bulk structure, a
surface covered with 2/3 ML OH is the most stable, also showing an
overpotential of 0.89 V. Notably, when switching the polarization
direction during the reaction, the overpotential becomes as small
as 0.20 V for the clean surface and 0.23 V for the surface with the
OH coverage, which is far below the usual minimum theoretical overpotential
for oxides (η = 0.37 V). We show that the reduction in reaction
free energy by ferroelectric switching can be performed in a relevant
frequency range and outweighs the energetic cost for polarization
switching by a factor of 6–12. Our study demonstrates that
switching of improper ferroelectricity is a highly promising route
to boost the OER activity of oxynitride photocatalytic water splitting
electrodes.