Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

Abstract

We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the ⟨001⟩ direction and the diameters varied in the range of 20–40nm with In∕N flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E2 (high) at 491cm−1 and A1 (LO) at 593cm−1.

Optical and structural properties of Eu-diffused and doped ZnO nanowires

“…High quality ZnO nanostructures are relatively easy to synthesize and have potential applications in optoelectronics, energy generation, hydrogen and biosensing [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. The study of Eu in ZnO has attracted interest for applications including visible red lasing [29], which was hampered by inefficient energy transfer from the ZnO host to the Eu 3+ ions [30][31][32].…”

Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111)

“…Figure 2b-d represents typical transmission electron micrographs, high resolution TEM (HRTEM) and selected area electron diffraction (SAED) images of single InN NR, respectively. The HRTEM was taken on the tip of the NR and the interplanar spacing, as observed from the fringe pattern of the HRTEM image, is 0.289 nm which corresponds to the (0002) lattice spacing of InN (Chao et al 2006). The SAED pattern shows clearly the visible bright spots establishing the single-crystalline nature of NRs.…”

Group III-nitride nanowires

“…The lattice mismatch between the substrate and the nanowire materials could possibly initialise a Volmer-Weber mechanism [59] at the beginning of the growth process [57], promoting the formation of nanowires rather than films. The most common substrates for extrinsic particle free GaN and InN nanowires are sapphire (Al 2 O 3 )(0001) [60][61][62] and Si 111[ [63][64][65][66]. It has been found from literature that if sapphire is used as the substrate, a buffer layer, usually AlN or SiN x , is needed prior to the growth of nanowires, otherwise the nanowires cannot be formed.…”