Catalyst-Free Growth of Two-Dimensional BC<sub><i>x</i></sub>N Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition

Yi, Kongyang; Jin, Zhepeng; Bu, Saiyu; Wang, Dingguan; Liu, Donghua; Huang, Yongjun; Dong, Yong; Yuan, Qinghong; Liu, Yunqi; Wee, Andrew Thye Shen; Wei, Dacheng

doi:10.1021/acsami.0c08555

Cited by 20 publications

(16 citation statements)

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“…Due to the rapid and large‐scale functionalization of 2D materials, Yi et al. [ 107 ] developed a temperature‐dependent plasma‐enhanced chemical vapor deposition (PECVD) method to directly grow 2D BC x N materials on non‐catalytic dielectrics by simply changing the growth temperature to adjust the composition of carbon, nitrogen, and boron for the first time. This method correspondingly adjusts the properties of the materials including the bandgap and electrical conductivity, which is difficult to achieve with other methods.…”

Section: Synthesis and Processing Of Flexible 2d Materialsmentioning

confidence: 99%

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Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Gong

et al. 2022

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properties and are proved to be potential in the fields of optoelectronics, photonics, biosensing as well as energy conversion and storage. Although centimeter-scale graphene single crystal has been obtained, it is not suitable for electronic switches in traditional transistors due to its semimetallic nature and large dark-current. Even many technologies have been proposed to create the energy bandgap in graphene, the value is remaining too small to realize practical applications. [2] Therefore, scientists are gradually changing the direction of research focusing on 2D materials beyond graphene, such as transition metal dichalcogenides (TMDs), graphitic carbon nitride, MXenes, hexagonal boron nitride (h-BN), hexagonal metal oxide (h-MO), and transition metal oxides (TMOs). As expected, 2D materials can provide a completely suspended surface without dangling bonds, so that the corresponding devices can minimize the influence of various surface states (Figure 1). [3] Benefitting from these excellent features, the 2D transistor can obtain a very low subthreshold swing (SS≈70 mV decade −1 ), which is comparable to the most advanced silicon (Si) transistor. [4] Due to excellent mechanical flexibility and compatibility with low-temperature manufacturing processes, 2D materials are expected to be used in flexible electronic products with plastic substrates. [5][6][7] The use of 2D materials in flexible electronic products can overcome several technical challenges in systems based on traditional materials, such as low mobility (typically below 10 cm 2 v −1 s −1 ), high driving voltage of organic materials, [8,9] complex technological processes, and large leakage current of polycrystalline Si. [10,11] Beyond their excellent electrical properties, 2D materials also exhibit a high degree of flexibility and transparency. Strong covalent bonds in the plane (Figure 1) make the 2D material mechanically robust, resulting in high fracture strains. [12][13][14] Mechanical robustness makes 2D materials suitable for flexible electronic products (Figure 2 reveals the roadmap of 2D materials used in flexible devices) that are subject to mechanical strain and cyclic stress. In addition, their atomic thickness makes them also suitable for transparent electronic products due to their high transparency in the visible range.In this paper, we first introduce the properties and preparation methods of 2D materials beyond graphene. Then, the applications of 2D materials in flexible devices are reviewed.2D materials are now at the forefront of state-of-the-art nanotechnologies due to their fascinating properties and unique structures. As expected, low-cost, high-volume, and high-quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices, a lot remains to be known. At this stage of their development, the key issues concern how to make further improvements to highperformance and scal...

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Section: Synthesis and Processing Of Flexible 2d Materialsmentioning

confidence: 99%

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confidence: 99%

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Gong

et al. 2022

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“…It mainly depends on the growth temperature when other parameters such as precursor category, proportion, pressure, and power density are set up. 22 Etching dominates at low temperature. As the temperature increases, etching becomes weaker, while nucleation and deposition dominate.…”

Section: Plasma-enhanced Chemical Vapor Depositionmentioning

confidence: 99%

“…Here, we used RF-PECVD (13.56 MHz) owing to its high plasma density. As a result of the highly reactive nature of RF plasma, both thin-film deposition and etching of the deposited materials coexist. ,, Achieving an equilibrium between deposition and etching is the key for obtaining high-quality 2D materials by PECVD (Figure c). It mainly depends on the growth temperature when other parameters such as precursor category, proportion, pressure, and power density are set up .…”

Section: Plasma-enhanced Chemical Vapor Depositionmentioning

confidence: 99%

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

et al. 2021

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Conspectus Since the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances. CVD is the most successful one for low-cost scalable preparation. However, when it comes to practical applications, disadvantages such as high operating temperature (∼1000 °C), probable usage of metal catalysts, contamination, defects, and interstices introduced by postgrowth transfer are not negligible. These are the reasons why plasma-enhanced CVD (PECVD), a method that enables catalyst-free in situ preparation at low temperature, is imperatively desirable. In this Account, we summarize our recent progress on controllable preparation of 2D materials by PECVD and their applications. We found that there was a competition between etching and nucleation and deposition in PECVD, making it highly controllable to obtain desired materials. Under different equilibrium states of the competition, various 2D materials with diverse morphologies and properties were prepared including pristine or nitrogen-doped graphene crystals, graphene quantum dots, graphene nanowalls, hexagonal boron nitride (h-BN), B–C–N ternary materials (BC x N), etc. We also used mild plasma to modify or treat 2D materials (e.g., WSe2) for desired properties. PECVD has advantages such as low temperature, transfer-free process, and industrial compatibility, which enable facile, scalable, and low-cost preparation of 2D materials with clean surfaces and interfaces directly on noncatalytic substrates. These merits significantly benefit the as-prepared materials in the applications. Field-effect transistors with high motilities were directly fabricated on graphene and nitrogen-doped graphene. By use of h-BN as the dielectric interfacial layer, both mobilities and saturated power densities of the devices were improved owing to the clean, closely contacted interface and enhanced interfacial thermal dissipation. High-quality materials and interfaces also enabled promising applications of these materials in photodetectors, pressure sensors, biochemical sensors, electronic skins, Raman enhancement, etc. To demonstrate the commercial applications, several prototypical devices were studied such as distributed pressure sensor arrays, touching module on a robot hand for braille recognition, and smart gloves for recording sign language. Finally, we discuss opportunities and challenges of PECVD as a comprehensive preparation methodology of 2D materials for future applications beyond traditional CVD.

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“…It is clear that in a PECVD system, the electrons, electron-induced species, and electrical field plays crucial roles during material growth. In addition, working temperature-dependent influence should also be considered in a PECVD process …”

Section: Pa Depositionmentioning

confidence: 99%

Applications of Plasma-Assisted Systems for Advanced Electrode Material Synthesis and Modification

Zhu

Yuan

et al. 2021

ACS Appl. Mater. Interfaces

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Research on advanced electrode materials (AEMs) has been explosive for the past decades and constantly promotes the development of batteries, supercapacitors, electrocatalysis, and photovoltaic applications. However, traditional preparation and modification methods can no longer meet the increasing requirements of some AEMs because some of the special reactions are thermodynamically and/or kinetically unfavorable and thus need harsh conditions. Among various recently developed advanced materials synthesis and modification routes, the plasma-assisted (PA) method has received increasing attention because of its unique and different “species reactivity” nature, as well as its wider and adjustable operating conditions. In this Spotlight on Applications, we highlight some recent developments and describe our recent progress by applying PA systems in the synthesis and modification of AEMs, including direct processing, PA deposition, and plasma milling (P-milling). The mechanisms of how plasma works for specific reactions are reviewed and discussed. It is shown that the PA technique has become a powerful and efficient tool in the following areas, including but not limited to materials synthesis, doping, surface modification, and functionalization. Finally, the prospect and challenges are also proposed for AEM preparation and modification using PA systems. This article aims to provide up-to-date information about the progress of PA technology in the fields of chemistry and materials science.

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Catalyst-Free Growth of Two-Dimensional BC_xN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition

Cited by 20 publications

References 38 publications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

Applications of Plasma-Assisted Systems for Advanced Electrode Material Synthesis and Modification

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Catalyst-Free Growth of Two-Dimensional BCxN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition

Cited by 20 publications

References 38 publications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

Applications of Plasma-Assisted Systems for Advanced Electrode Material Synthesis and Modification

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Product

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Catalyst-Free Growth of Two-Dimensional BC_xN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition