2009
DOI: 10.1016/j.matlet.2009.06.011
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Catalytic-free growth of ZnGa2O4 nanowires on amorphous carbon layers

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Cited by 11 publications
(5 citation statements)
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“…70% in the whole nanowires. HRTEM image recorded along [1][2][3][4][5][6][7][8][9][10] axis zone (Fig. 3b) shows that the interplanar spacing is 0.32 nm, which corresponds to the (1 1 1) planes of zinc blende ZnS, further confirming zinc-blende structure of the nanowire.…”
Section: Resultsmentioning
confidence: 70%
See 1 more Smart Citation
“…70% in the whole nanowires. HRTEM image recorded along [1][2][3][4][5][6][7][8][9][10] axis zone (Fig. 3b) shows that the interplanar spacing is 0.32 nm, which corresponds to the (1 1 1) planes of zinc blende ZnS, further confirming zinc-blende structure of the nanowire.…”
Section: Resultsmentioning
confidence: 70%
“…As is well known, one dimensional (1D) semiconductor nanowires have attracted considerable attention due to their potential applications in the nanooptics, nanoelectronics and nanomagnetics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. As an important semiconductor material with wide band gap of 3.72 eV for the zinc blende phase and 3.77 eV for wurtzite phase at room temperature, zinc sulfide (ZnS) has attracted considerable research interest [16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…In the past decades, one-dimensional (1-D) nanostructures including nanowires, nanoribbons and nanotubes have attracted considerable attention due to their promising applications in numerous areas such as nanoelectronics, nano-optoelectronics, nanosensors and solar energy storages [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. As an important functional inorganic material, manganese dioxide (MnO 2 ) has numerous applications in catalysis, ion exchange, molecular adsorption, rechargeable batteries and supercapacitors [15][16][17][18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…Transparent conducting oxides (TCO) are certain to be required for various important optical and electric applications due to their interesting cubic spinel structure (AB 2 O 4 ) [1][2][3][4][5]. As one of the most important TCO semiconductors with wide band gap of 3.6 eV, zinc stannate (Zn 2 SnO 4 ) has been considered as promising materials as chemical sensors, TC electrodes and photocatalysts due to its high chemical sensitivity, low visible absorption and low electrical conductivity [6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%