Catalytic synthesis and photoluminescence of gallium nitride nanowires

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

“…These FWHM values are comparable with 7.0 cm −1 and 6.4 cm −1 for A 1 (TO) and E 2 (high) modes reported for AlN crystallite, respectively [25]. The nanomaterials, due to the size confinement effect and internal stress, usually make the Raman peaks appear broadened and asymmetric [26]. From the analysis of the linewidth and frequency of two char- acteristic peaks, the as-synthesized AlN nanowires have low internal stress and are not obviously affected by size confinement effect.…”

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate

“…In the past decade, one-dimensional GaN nanomaterials have attracted extensive attention owing to their great uses in the novel nanoelectronic devices and the quantum devices [3] . Up to the present, several techniques have been developed to prepare one-dimensional GaN nanomaterials such as carbon nanotube-confined reaction [4] , template-based growth method [5] , catalytic growth [6] and direct reaction of metal Ga with NH 3 [7] . Furthermore, Huang et al have reported successful fabrication of logic gates and demonstrated the computation capabilities from assembled p-Si and n-GaN crossed nanowire junctions [8] .…”

Low Temperature Phase Separation in Nanowires

“…Molten gallium was used as the source material and NH 3 (30 sccm) as the reactant gas in a horizontal tubular furnace. Details of the growth process may be found elsewhere [23]. A low temperature in situ X-ray diffractometer (Scintag 2000) was utilized to investigate the crystalline structure of the GaNWs produced at various temperatures.…”