2017
DOI: 10.1109/jstqe.2017.2686336
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Catastrophic Optical Bulk Damage in High-Power InGaAs-AlGaAs Strained Quantum Well Lasers

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Cited by 22 publications
(15 citation statements)
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“…Several attempts were made to image these defects, however no crystallographic defects were observed. This is despite having used the same TEM sample preparation and imaging techniques in our facilities to observe crystallographic defects in other VCSEL and high-power edge-emitting laser diode samples [16]. In these previous studies, dislocations were observed, and corresponded spatially with dark-line defects seen in EL and EBIC images.…”
Section: Discussionmentioning
confidence: 97%
“…Several attempts were made to image these defects, however no crystallographic defects were observed. This is despite having used the same TEM sample preparation and imaging techniques in our facilities to observe crystallographic defects in other VCSEL and high-power edge-emitting laser diode samples [16]. In these previous studies, dislocations were observed, and corresponded spatially with dark-line defects seen in EL and EBIC images.…”
Section: Discussionmentioning
confidence: 97%
“…This process was necessary for EBIC techniques to detect any degradation-related features such as dark spot or line defects in the active region at 30 kV in SEM. Our group has extensively employed EBIC to detect dark spot / line defects in degraded edgeemitting 9-nm single-and multi-mode InGaAs-AlGaAs strained QW lasers [17]. Dark spot or line defects observed in EBIC are manifestations of dislocations in the active layer.…”
Section: Failure Mode Analysismentioning
confidence: 99%
“…This indicates that their physical origin of degradation is different. Our group proposed specific point defects (arsenic anti-sites) behaving as both NRCs and electron traps (EL2 traps) as the physical origin of degradation in EELs [17]. Point defects must be NRCs and electron traps for EELs to generate dislocations (dark spot or line defects in EBIC) via REDR (recombination enhanced defect reaction).…”
Section: Failure Mode Analysismentioning
confidence: 99%
“…This means that most of the information about the COD process is obtained by postmortem analysis of failed devices. The crystallographic fingerprint of the COD is the dark line defect (DLD), which is an elongated defect, aligned with the laser cavity, that gives a dark contrast in luminescence images, e.g., cathodoluminescence (CL) [37], and electroluminescence (EL) [32].…”
Section: Post-cod Analysismentioning
confidence: 99%