2017
DOI: 10.1039/c7ra04647b
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Cathodic shift of a photo-potential on a Ta3N5photoanode by post-heating a TiO2passivation layer

Abstract: A 90 mV cathodic shift of photo-potential of a Ta3N5photoanode is achieved by increasing the conductivity of a TiO2passivation layer.

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Cited by 9 publications
(6 citation statements)
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“…3,13 So far, Ta 3 N 5 photoanodes have been fabricated by nitridation of oxide layers, 14−16 particle transfer, 17 magnetron sputtering, 18,19 and flux coating. 20 In addition, there have been attempts to improve the PEC performances, such as controlling the Ta 3 N 5 structure, 16,21−23 doping Ta 3 N 5 , 24−26 modifying the Ta 3 N 5 surface with co-catalysts and a passivation layer, 21,27,28 and introducing a hole-blocking layer. 29 cm −2 at 1.23 V vs a reversible hydrogen electrode (hereafter abbreviated as V RHE ) under simulated AM 1.5G solar-light irradiation.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…3,13 So far, Ta 3 N 5 photoanodes have been fabricated by nitridation of oxide layers, 14−16 particle transfer, 17 magnetron sputtering, 18,19 and flux coating. 20 In addition, there have been attempts to improve the PEC performances, such as controlling the Ta 3 N 5 structure, 16,21−23 doping Ta 3 N 5 , 24−26 modifying the Ta 3 N 5 surface with co-catalysts and a passivation layer, 21,27,28 and introducing a hole-blocking layer. 29 cm −2 at 1.23 V vs a reversible hydrogen electrode (hereafter abbreviated as V RHE ) under simulated AM 1.5G solar-light irradiation.…”
Section: ■ Introductionmentioning
confidence: 99%
“…In addition to possessing a band gap that is suitable for water splitting, the narrowness of its band gap (2.1 eV) allows for the absorption of visible light with wavelength of up to 600 nm. , So far, Ta 3 N 5 photoanodes have been fabricated by nitridation of oxide layers, particle transfer, magnetron sputtering, , and flux coating . In addition, there have been attempts to improve the PEC performances, such as controlling the Ta 3 N 5 structure, , doping Ta 3 N 5 , modifying the Ta 3 N 5 surface with co-catalysts and a passivation layer, ,, and introducing a hole-blocking layer . Li et al reported that a Ta 3 N 5 photoanode fabricated by nitridation of NaTaO 3 on the surface of a Ta substrate exhibited a photocurrent of 12.1 mA·cm –2 at 1.23 V vs a reversible hydrogen electrode (hereafter abbreviated as V RHE ) under simulated AM 1.5G solar-light irradiation .…”
Section: Introductionmentioning
confidence: 99%
“…In open circuit condition, under illumination electrons accumulate within the film and shift the Fermi level to negative potential thereby resulting in a cathodic shift of OCP. This cathodic shift is the prime characteristic of material with n‐type nature . The maximum photo potential (i. e. Voc Light −Voc Dark ) has been observed for Ag−Au‐ZNRs based photo‐anode among all the synthesized photo‐anodes.…”
Section: Resultsmentioning
confidence: 83%
“…The OCP measurements can be used to understand the intricate nature of all the synthesized photo-anodes. [12] OCP is measured as a function of time under light ON and OFF conditions and the same are plotted for all the synthesized photo-anodes in Figure 6.…”
Section: Resultsmentioning
confidence: 99%
“…[15,18,27] There are several strategies to negatively shift the onset potential for the OER, e.g., cation doping of Ta 3 N 5 , [28][29][30][31][32] precious morphology design of Ta 3 N 5 , [33] and conjugation of Ta 3 N 5 with other materials. Especially, there are a lot of studies of the conjugation of Ta 3 N 5 with GaN, [32,34,35] ferrihydrite coating, [36] TiO 2 coating, [37] Ni(OH) x /MoO 3 bilayer coating, [38] and Cu 2 O coating [39] for cathodic shift of the onset potential. Nurlaela et al achieved band structure tuning in a GaN surface layer by Mg doping to obtain an onset potential below 0 V versus RHE.…”
Section: Introductionmentioning
confidence: 99%