Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD

López-Estopíer, R.; Aceves-Mijares, M.; Falcony, C.

doi:10.5772/34888

Cited by 14 publications

(11 citation statements)

References 49 publications

(61 reference statements)

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“…Only in the spectrum which corresponds with = 16 we predicted the Si-O rocking type vibrations in interval from 417 to 429 cm −1 and it has a quite small intensity. A probable explanation for this fact is that Si-O rocking type vibration observed experimentally could be due to other kinds of oxides existing in SRO thin films, like SiO 2 and Si 2 O 3 [9].…”

Section: Ftir and Pl Calculationsmentioning

confidence: 93%

“…The results predict emission in a wide range from violet to orange color. Experimentally, the luminescence in this range has been reported due to cathode luminescence in SRO films (see Figure 8 of [10]) for asgrown and annealed films, mainly for Ro = 20 and 30, when an energy excitation of 5 keV and 0.3 mA current was used [9]. Additionally, the interested audience in experimental emission of as-grown SRO films with Ro = 30 is motivated to review [11].…”

Section: Ftir and Pl Calculationsmentioning

confidence: 99%

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The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

Espinosa‐Torres

Hernández-de-la-Luz

Martínez-Juárez

et al. 2016

Journal of Nanomaterials

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Not long ago, we developed a theoretical model to describe a set of chemical reactions that can potentially occur during the process of obtaining Silicon Rich Oxide (SRO) films, an off stoichiometry material, notwithstanding the technique used to grow such films. In order to elucidate the physical chemistry properties of such material, we suggested the chemical reactions that occur during the process of growing of SRO films in particular for the case of the Low Pressure Chemical Vapor Deposition (LPCVD) technique in the aforementioned model. The present paper represents a step further with respect to the previous (published) work, since it is dedicated to the calculation by Density Functional Theory (DFT) of the optical and electronic properties of the as-grown and annealed SRO structures theoretically predicted on the basis of the previous work. In this work, we suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the DFT, the contribution that they may have to the phenomenon of luminescence (PL), which is experimentally measured in SRO films. We evaluated the optical and electronic properties of both the as-grown and the annealed structures.

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Section: Ftir and Pl Calculationsmentioning

confidence: 93%

Section: Ftir and Pl Calculationsmentioning

confidence: 99%

The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

Espinosa‐Torres

Hernández-de-la-Luz

Martínez-Juárez

et al. 2016

Journal of Nanomaterials

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“…In Figure 2b, the analysis in-depth profile of an SRO film with 5.2 at.% of Si-excess compared to a SiO 2 film is shown. It can be seen that silicon content in SRO film increase respect to SiO [22,23]. The contributions of the intermediate Si peaks (Si +1 , Si +2 , Si +3 ) corresponding to the suboxide phases become smaller when the SRO films are thermally annealed at 1100°C, while Si +4 peak for SiO 2 and Si 0 peak for elemental Si becomes dominant, especially the intensity of Si 0 peak increases (Figure 3b), explaining the Si-SiO 2 phase separation and Si-NCs formation after annealing, as shown by similar results found by Chen et al [24].…”

Section: Sro Monolayersmentioning

confidence: 94%

Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO 2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.

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“…It has been proposed in different paper that in LPCVD SRO the highest light emission has been observed in films with silicon excess in the order of 5 at. % (low silicon excess), which does not contain silicon nano‐crystals, but rather silicon oxide defects related to silicon oxidation states.…”

Section: Introductionmentioning

confidence: 99%

“…The IM was used by Novikov and Gritsenko to describe SRO films prepared by LPCVD from a SiH 4 and N 2 O source at 750 °C. However, our group also has been modeling the SRO‐LPCVD with the RBM.…”

Section: Introductionmentioning

confidence: 99%

Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD

Aceves-Mijares

Espinosa‐Torres

Flores-Gracia

et al. 2013

Surface & Interface Analysis

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Silicon rich oxide (SRO) is a silicon compatible material that could solve the light emission limitation inherent to bulk silicon. However, not many applications are yet reported, since still much research has to be done. In this paper, SRO superficial films were obtained by low pressure chemical vapor deposition. Structural and optical characterization was done by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) corroborating that after annealing, the SiO and the Si 2 O phase clearly increases. Emission of SRO in the range between ultra violet and near-infrared is determined by photo, electro and cathode luminescence. Assuming that emission is due to agglomerates of Si-O compounds, computational simulations of cyclic chains of SiO were done to calculate the FTIR spectra, emission and HOMO-LUMO densities. It was found that emission of molecules with less than 10 silicon atoms is not likely to be present in the annealed films. However, for molecules with more than 13 silicon atoms, the emission extends to the visible and near infrared region. The calculated FTIR agrees with the experimental results.

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Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD

Cited by 14 publications

References 49 publications

The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

Synthesis and Luminescent Properties of Silicon Nanocrystals

Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD

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