In particular, UV-C light in the wavelength range from 220 to 280 nm has recently been spotlighted because it is most effective for germicidal applications and sterilization. [2,3] In particular, microbiological studies have shown that the exposure of microorganisms and nonliving organisms, such as viruses, to UV-C radiation results in photochemical changes to nucleic acids, which impairs their ability to reproduce and leads them to be inactive. [4][5][6] Furthermore, a precise UV-C radiation dose could effectively be used to decompose microplastics in wastewater treatment plants. [7,8] Accordingly, the study of UV-C radiation plays an important role in meeting the demands and desires in various applications.A conventional method for realizing UV-C-emitting devices is to use excimer lamps that consist of mercury (Hg) gas and UV-C-emitting materials; the vacuum UV radiation generated by the discharge of the Hg gas excites the UV-C-emitting material. [9] Several famous UV-C-emitting materials have been introduced in the literature and research reports, such as Y 2 SiO 5 :Pr 3+ , YPO 4 :Pr 3+ , YBO 3 :Pr 3+ , and YPO 4 :Bi 3+ , which go through a powder synthesis process. [10] However, the use of Hg gas in conventional excimer lamps has limitations due to its toxicity. [11] Although excimer lamps that utilize less toxic noble gases instead of Hg have been reported, [12] the fabrication procedure contains troublesome work, such as injection of gas with high-pressure sealing into the tube as well as coating and positioning of the emitting materials. [13] Most of the emitting materials used in excimer lamps are powder-type materials, which require several tiresome steps, including milling, to provide effective shape and size for excimer purposes. Moreover, excimer lamps have some disadvantages with respect to energy consumption and limitation of the shape design, similar to fluorescent lamps. In addition, the powder coated inside an excimer lamp inevitably suffers from degradation due to the heat resulting from noble gas discharge, which decreases the lifetime.Recently, a system based on a ternary AlGaN material with a direct wide bandgap has emerged as a promising candidate for Hg-free UV-C light-emitting diodes (LEDs). [14][15][16][17] Typically, UV-C LEDs based on AlGaN are fabricated by forming a multiquantum well active layer by designing the bandgap of AlGaN on a GaN substrate via epitaxial growth using An ultraviolet (UV) light source is continuously required for applications of sterilization as well as industrial value. In particular, research on materials and devices emitting UV-C radiation in the range from 210 to 280 nm is very meaningful and challenging work. Herein, UV-C electroluminescence (EL) from an all-solution processed CaSiO 3 :Pr 3+ (CSO) thin film is reported for the first time. The CSO thin film is formed on a Si substrate (size of 13 × 13 mm 2 ), and structurally, the UV-C EL device has a metal-oxidesemiconductor (MOS) shape consisting of CSO and interlayered SiO x of 100 and 150 nm thickness, r...