Cathodoluminescence characterization of suspended GaN nanomembranes

Stevens‐Kalceff, Marion A.; Tiginyanu, I. M.; Popa, V.; Braniste, Tudor; Brenner, Philipp

doi:10.1063/1.4816562

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…In this paper, we demonstrate the fabrication of GaN PhC ultrathin membranes using a cost-effective technology based on surface charge lithography [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

et al. 2015

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We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro-and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.

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“…In this paper, we demonstrate the fabrication of GaN PhC ultrathin membranes using a cost-effective technology based on surface charge lithography [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

et al. 2015

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“…Faster recombination velocity at defects limits minority carrier diffusion, contributing to this nanoscale resolution. 5 Nanostructure studies have included the growth, 6,7,8,9,10,11,12,13,14,15,16,17 processing, 18 and electronic properties of nanowires, 19,20,21,22 nanobelts, 23 nanotubes, 24 nanoparticles, 25 homo-and heterojunctions, 26,27,28,29 as well as their strain effects 30,31,32,33 and defects. 34,35 Quantum structure studies have included wells, 36,37,38,39 disks, 40,41 and dots.…”

Section: Introductionmentioning

confidence: 99%

Spatially-resolved cathodoluminescence spectroscopy of ZnO defects

Brillson

Ruane

Hui-bin

et al. 2017

Materials Science in Semiconductor Processing

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Spatially-resolved cathodoluminescence spectroscopy has contributed significant new information to our understanding of native point defects in ZnO micro-and nanoscale structures. This paper aims to review representative examples of this work and the new perspectives gained from spatially resolving these defects both laterally and depth-wise. Results obtained from many groups worldwide include studies of Schottky diodes, polycrystalline ceramics, nanostructures, and microwires. The nature and spatial distribution of native point defects in these materials together with their strong dependence on growth and processing suggest new avenues for their control in transport and optoelectronic device structures.

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“…One can realize from Figure 8c that such membranes are fairly flexible. This technology was extended to allow for the controlled fabrication of suspended ultrathin GaN membranes of predetermined dimensions with supporting structures [74,75]. This extension is based on using FIB treatment with 2 fluences (one higher and another lower) as illustrated in Figure 9a.…”

Section: Surface Charge Lithography (Scl)mentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Cathodoluminescence characterization of suspended GaN nanomembranes

Cited by 6 publications

References 37 publications

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

Spatially-resolved cathodoluminescence spectroscopy of ZnO defects

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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