Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide

Fabbri, Filippo; Cavallini, A.; Attolini, G.; Rossi, Francesca; Salviati, G.; Dierre, Benjamin; Fukata, Naoki; Sekiguchi, Takashi

doi:10.1016/j.mssp.2008.10.004

Cited by 13 publications

(2 citation statements)

References 5 publications

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“…Relatively high energy of the electron beam increases the chance of sample damage during the CL measurements as compared to PL. This damage can occur via different mechanisms, such as adsorption/desorption or charging at the surfaces, creation or activation of defects, etc [64][65][66][67][68][69][70][71]. Such e-beam induced effects reduce the reliability of quantitative CL measurements.…”

Section: Variation Of the CL Intensity During The Measurementsmentioning

confidence: 99%

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Dierre

Yuan

Sekiguchi

2010

Science and Technology of Advanced Materials

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Spatially and spectrally resolved low-energy cathodoluminescence (CL) microscopy was applied to the characterization of nanostructures. CL has the advantage of revealing not only the presence of luminescence centers but also their spatial distribution. The use of electrons as an excitation source allows a direct comparison with other electron-beam techniques. Thus, CL is a powerful method to correlate luminescence with the sample structure and to clarify the origin of the luminescence. However, caution is needed in the quantitative analysis of CL measurements. In this review, the advantages of cathodoluminescence for qualitative analysis and disadvantages for quantitative analysis are presented on the example of nanostructures.

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Section: Variation Of the CL Intensity During The Measurementsmentioning

confidence: 99%

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Dierre

Yuan

Sekiguchi

2010

Science and Technology of Advanced Materials

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“…One of them emphasizes the quantum confinement [10] effect and the other suggests the essential participation of the localized surface states and oxide covering on the surface of the silicon carbide nanostructures [6,11]. Both approaches strongly depend on the geometry of the skeleton created during the formation process.…”

Section: Introductionmentioning

confidence: 99%

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

Trejo

Calvino

Cruz‐Irisson

2010

Int J of Quantum Chemistry

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The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C-rich and Si-rich pores surface. The enlargement of energy band gap is greater in the C-rich than Si-rich pores surface. This supercell model emphasizes the interconnection between 3C-SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology.

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Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

et al. 2022

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Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide

Cited by 13 publications

References 5 publications

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

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