Cathodoluminescence degradation of PLD thin films

Swart, H.C.; Coetsee, E.; Terblans, J.J.; Ntwaeaborwa, O.M.; Nsimama, P. D.; Dejene, F.B.; Dolo, J. J.

doi:10.1007/s00339-010-5915-6

Cited by 21 publications

(8 citation statements)

References 20 publications

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“…It is therefore clear that electron stimulated surface chemical reactions (ESSCRs) are responsible for the CL intensity degradation. This was also pointed out by Swart et al [11] in a previous paper on the CL degradation of different PLD thin films. In their preliminary study it was pointed out that Gd 2 O 3 formed during electron degradation, it is however clear in this study that a sulfur compound (Gd 2 S 3 ) also formed part of the degraded layer.…”

Section: Methodsmentioning

confidence: 50%

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

et al. 2010

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This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd 2 O 2 S:Tb 3+ thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900 • C was found to be the best in terms of the PL intensity of the Gd 2 O 2 S:Tb 3+ emission. The main emission peak due to the 5 D 4 -7 F 5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd 2 O 3 layer, with small amounts of Gd 2 S 3 , on the surface.

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Section: Methodsmentioning

confidence: 50%

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

et al. 2010

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“…Kim et al have reported that the darkening occurred in the irradiation because the carbon overlayer was formed on the phosphor surface under current density of 160 A/cm 2 electron beam irradiation at the vacuum level of 10 −6 Pa [12]. Coetsee et al have reported the formation of the new oxide layer under high current density electron irradiation (26 mA/cm 2 ) at 10 −5 Pa oxygen pressure [9][10][11]. The present electron current density (200 A/cm 2 ) and vacuum level (10 −6 to 10 −7 Pa) are almost the same as the values in Ref.…”

Section: Luminescence Propertiesmentioning

confidence: 97%

“…Coetsee et al reported the CL degradation of Ce-doped Y 2 SiO 5 (YSO:Ce) particles under the continuous electron beam irradiation with high current density at 10 −5 Pa oxygen pressure [9][10][11]. X-ray photoelectron spectroscopy (XPS) showed the formation of silicon dioxide, CeO 2 and CeH 3 layer responsible for the CL degradation.…”

Section: Introductionmentioning

confidence: 97%

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Cathodoluminescence of Ce-doped Gd2SiO5 and Gd9.33(SiO4)6O2 phosphor under continuous electron irradiation

Yokota

Yoshida

Ishibashi

et al. 2011

Journal of Alloys and Compounds

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“…This is probably due to the fact that during electron bombardment, formation of new layers occurs that are responsible for the decrease in the luminescence intensity. Degradation under electron bombardment of Y 2 SiO 5 :Ce and Gd 2 O 2 S:Tb films obtained by pulsed laser sputtering has been studied in detail in [10]. Using x-ray photoelectron spectroscopy, it has been shown that electron bombardment in Y 2 SiO 5 :Ce films is responsible for breaking the Y-Si-O bond and leads to formation of new chemical structures.…”

Section: Introductionmentioning

confidence: 98%

Cathodoluminescence of yttrium oxide and yttrium and zinc silicate films

2011

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Eu). We have studied the dependences of the luminescence intensity on the energy of the exciting electrons, the electron beam current density, and the exposure time. We hypothesize that the decrease in the luminescence intensity during electron bombardment is connected with formation of new oxide layers as a result of an electron-stimulated surface chemical reaction.Introduction. Among the large number of materials for optoelectronics, luminescent materials are of special importance: they are used for designing displays, scintillators, and devices for recording and viewing information. The luminescence efficiency is determined to a significant degree by the characteristic features of the recombination process, generally due to luminescence centers of defect origin. In most multicomponent luminophores, the luminescence process is connected with recombinations involving complex defects and impurities, which in a number of cases work together to improve the luminescence efficiency and to change the spectral composition of the luminescence.Only three color components are needed for any full-color display: red, green, and blue, which in combination create all the colors in the visible spectrum. In most cathodoluminescent screens today, the following luminophores are used: Y 2 O 2 S:Eu, which emits red light; (Zn,Cd)S:Cu:Al emits green light; ZnS:Ag emits blue light. However, these sulfide-based luminophores are not suitable for many flat panel displays, which are currently under intensive development. Accordingly, a number of papers have appeared in which thin-film oxide materials have been studied as luminophores [1][2][3][4][5]. As shown by analysis of these papers, the authors use a narrow range of luminescent materials, which limits the total information available about the problem as a whole. This is why in this work, we have studied a number of oxide films which can be used in making the color components for a full-color display.Experimental Procedure. Thin films of Y 2 SiO 5 :Ce, Zn 2 SiO 4 :Ti, Zn 2 SiO 4 :Mn, and Y 2 O 3 :Eu of thickness 0.2-1.0 μm were obtained on quartz substrates by high-frequency magnetron sputtering from stoichiometric mixtures of the corresponding oxides. The activator content was 0.2-2.0 mol%. Immediately after sputtering, for a substrate temperature of 300

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Cathodoluminescence degradation of PLD thin films

Cited by 21 publications

References 20 publications

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

Cathodoluminescence of Ce-doped Gd2SiO5 and Gd9.33(SiO4)6O2 phosphor under continuous electron irradiation

Cathodoluminescence of yttrium oxide and yttrium and zinc silicate films

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