Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating

Gustafsson, Anders; Samuelson, Lars; Malm, Jan‐Olle; Vermeire, Gerrit; Demeester, Piet

doi:10.1063/1.111037

Cited by 11 publications

(9 citation statements)

References 12 publications

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“…The wire luminescence always appears at the lowest energy due to the larger thickness and In content of the InGaAs layer at the center of the crescents. 25,31 The peak assignments were confirmed by cathodoluminescence imaging at the corresponding emission energy of similar structures, 33 and PL of selectively etched samples where the t-QWs and s-QWs were removed. Quite remarkably, the emission from the wires dominates the PL spectrum in spite of their small active volume as compared to the t-QWs.…”

Section: A Quantum Wire Featuresmentioning

confidence: 88%

Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

Constantin

Martinet

Lelarge

et al. 2000

Journal of Applied Physics

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Articles you may be interested inReduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires Appl. Phys. Lett. 101, 151114 (2012); 10.1063/1.4758685 Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature Appl. Phys. Lett. 99, 101107 (2011); 10.1063/1.3610950 Effect of indium segregation on optical properties of V-groove InGaAs/GaAs strained quantum wires Appl. Phys. Lett. 75, 3300 (1999); 10.1063/1.125331InGaAs quantum wires and wells on V-grooved InP substrates

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Section: A Quantum Wire Featuresmentioning

confidence: 88%

Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

Constantin

Martinet

Lelarge

et al. 2000

Journal of Applied Physics

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“…The peak at 1.366 eV originates from the QWR's in the bottom of the grooves, whereas the peak at 1.390 eV comes from the t-QW's on the ͑100͒ facet connecting the grooves together, as confirmed by cathodoluminescence imaging at the corresponding emission energy of similar structures. 45 Quite remarkably, the emission from the QWR's is as intense as that from the t-QW's in spite of their much smaller active volume, thanks to efficient carrier capture into the wires. The QWR emission line is symmetric and displays a very narrow linewidth of 5.5 meV, evidencing the high uniformity between the wires over the probed area (ϳ30 m corresponding to about Ϸ120 wires͒.…”

Section: B Photoluminescence Spectroscopymentioning

confidence: 99%

Quantum wires in multidimensional microcavities: Effects of photon dimensionality on emission properties

et al. 2002

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Seeded self-ordered, strained, 10-nm-size In 0.15 Ga 0.85 As/GaAs V-groove quantum wires ͑QWR's͒ have been incorporated into multidimensional, high finesse (Qϳ5000), micron-size AlAs/Al 0.07 Ga 0.93 As photon-well, photon-wire ͑PWR͒, and photon-dot ͑PD͒ Bragg-air microcavities. The impact of the photon dimensionality on the QWR spontaneous emission is systematically elucidated in the spectral, spatial, temporal, and polarization domains using different microphotoluminescence techniques. Larger effects are demonstrated for resonant cavities confining in multiple dimensions and of smaller sizes. We observe increasingly rich structuring of the emission spectra and patterns for decreasing cavity dimensionality, leading to a series of sharp ͑0.28 meV͒ lines with enhanced intensities (ϫ50) at specific directions in fully confined PD's. Photon lateral confinement in PWR's and PD's is necessary to evidence cavity-induced polarization effects and a spontaneous emission rate enhancement by a Purcell factor of ϫ1.7, limited by the QWR inhomogeneous broadening. The results are interpreted in terms of the redistribution of the QWR emission into confinement-induced resonances in the photon mode distribution in the different cavities. In particular, systematic wave-vector quantization in the directions of photon confinement, and dispersive behavior in the free propagation directions are evidenced in close agreement with model calculations.

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“…In general, substrates with V grooves are used. Details of the growth 21 and a preliminary cathodoluminescence ͑CL͒ study 22 of the structure has been presented previously. 18 -20 In this article we present an extensive investigation of the properties of a GaAs/AlGaAs QWR structure.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a single-layer quantum wire structure grown directly on a submicron grating

Gustafsson

Samuelson

Hessman

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inElectronic structure of a single-layer InN quantum well in a GaN matrix Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating A single AlGaAs/GaAs quantum well ͑QW͒/quantum wire ͑QWR͒ structure was grown by metalorganic vapor phase epitaxy on a submicron period grating of V grooves. High resolution transmission electron microscopy studies of the sample identifies three regions of the QW; between the grooves, approximately 3.5 nm thick and oriented along ͑100͒, on the sidewalls of the V groove slightly thinner and oriented along ͕111͖. At the bottom of the groove an approximately 70 nm wide crescent shaped region forms a QWR. In addition, a vertical quantum well ͑VQW͒ extends from the bottom of each V groove in the GaAs substrate to the surface. The luminescence spectra of the sample are dominated by a peak originating in the QW, with additional peaks of the QWR, the VQW and the AlGaAs barrier. The striped nature of the sample is revealed in the top view cathodoluminescence ͑CL͒ images of all four peaks. In side view CL images, the QWR emission appears spot like, whereas the emission of the VQW is elongated in the direction perpendicular to the surface. Photoluminescence excitation spectroscopy reveals that the main source for excitation in the QWR comes from the VQW, even though a small contribution comes from the QW.

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Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating

Cited by 11 publications

References 12 publications

Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires

Quantum wires in multidimensional microcavities: Effects of photon dimensionality on emission properties

Characterization of a single-layer quantum wire structure grown directly on a submicron grating

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