Cathodoluminescence study of InxGa1−xSb crystals grown by the Bridgman method

Cathodoluminescence mapping and spectroscopy of Te-doped grown by the vertical Bridgman method under an alternating magnetic field

“…Similarly, the (735-745) meV transition probably corresponds to a defect involving Te atoms. Actually, three emission bands related to Te compensation, peaked near 745, 734 and 723 meV, have been reported for Te-doped GaSb [7][8][9][10]. In our case, the relative intensity of the (735-745) meV band was found to be weak -except in the spectra recorded for the seed and the growth interfaces.…”

“…4(b). The (770-777) meV emission is the equivalent to band A emission in GaSb [9], attributed to a transition from the conduction band to the neutral state of the V Ga Ga Sb native acceptor level [7]. Similarly, the (735-745) meV transition probably corresponds to a defect involving Te atoms.…”

Microstructure and solidification behavior of cast GaInSb alloys

“…The feeding materials were pre-synthesized by Vertical Bridgman (VB) following the procedure of Ref. [14] and the most representative results have been obtained for nominal In concentrations ranging between 10 and 12 at%.…”