2005
DOI: 10.1016/j.physb.2005.05.027
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Cathodoluminescence study of plastically deformed bulk ZnO single crystal

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Cited by 27 publications
(19 citation statements)
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“…[15][16][17][18][19][20] Moreover, the recombination strength depends on the dislocation type. 21,22 When they are introduced at high temperatures (770-1070 K), new emission lines are observed, certainly due to point-defect complexes that have migrated to the dislocation cores.…”
mentioning
confidence: 99%
“…[15][16][17][18][19][20] Moreover, the recombination strength depends on the dislocation type. 21,22 When they are introduced at high temperatures (770-1070 K), new emission lines are observed, certainly due to point-defect complexes that have migrated to the dislocation cores.…”
mentioning
confidence: 99%
“…2a. On the other hand, almost all emissions in ZnO are suppressed due to the introduction of misfit dislocations at room temperature (Coleman et al, 2006, Takkouk et al, 2005. Since those dislocations are similar in type, the atomistic structure of a dislocation would be modified at elevated temperatures, presumably due to an interaction of the dislocation with point defects.…”
Section: In-situ Analysis Of Optoelectronic Properties Of Semiconductmentioning
confidence: 99%
“…Discordâncias induzidas agem geralmente como centros de recombinação não radiativa, causando a redução na intensidade de luz emitida em algumas energias [10,14]. Esta recombinação é uma ferramenta extremamente útil no estudo do mecanismo de deformação plástica destes materiais.…”
Section: Kucheyev E Colaboradores Estudaram a Deformação Plástica De unclassified
“…As imagens apresentadas continham rosetas com braços paralelos duplos, sugerindo que a formação de discordâncias ocorre igualmente em planos de átomos de zinco e átomos de oxigênio. [14].…”
Section: Kucheyev E Colaboradores Estudaram a Deformação Plástica De unclassified
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