Y 2 O 3 : Eu thin film phosphors were deposited on Si (100). These layers were subjected to a prolonged electron beam bombardment with 2 keV energy and current density of 45 mA/cm 2 , in 1 x 10 -6 Torr O 2 pressure backfilled from a base pressure of 3 x 10 -9 Torr at room temperature. Auger electron spectroscopy (AES) and Cathodoluminescence (CL) both excited by the same electron beam were used to monitor the changes in the surface chemistry of the phosphor and luminous efficiency during electron bombardment, respectively. Degradation was manifested by the depletion of oxygen on the surface of the phosphor with the consequence CL intensity decrease. However, upon coating the phosphor with a thin film of Ta 2 O 5, the depletion of O on the surface was not as severe and there was a 60 % recovery of the CL intensity.