Cation and anion vacancies in proton irradiated GaInP

Abstract

Defects in electron irradiated GaInP grown by molecular beam epitaxy have been investigated using deep level transient spectroscopy (DLTS) and positron annihilation spectroscopy (PAS). PAS measurements indicate that vacancies are introduced at a high rate. Core annihilation curves, compared with theoretical calculations, are used to identify the principal defect in n-GaInP as cation vacancies, while phosphorus vacancies are seen in both undoped and n-type GaInP. The concentrations of defects obtained by PAS and Hall are in good agreement with each other. DLTS gives much lower values, possibly due to assumptions in the C–V analysis. These results give support to the identification of the midgap deep level observed using DLTS in irradiated and as-grown n-type and undoped GaInP as the phosphorus vacancy.

Defect identification in semiconductors with positron annihilation: Experiment and theory

“…In III-phosphides (such as GaP or InP) the vacancies on both sublattices have been identified, and these have an important effect on the electrical properties in undoped, n-type, and p-type material (Mahony, Mascher, and Puff, 1996;Bretagnon, Dannefaer, and Kerr, 1997;Dekker et al, 2002). As an example, the V P -Zn pairs have been shown to form through vacancy migration from the crystal surface in Zn-doped InP , while the In vacancies formed through thermal annealings render undoped InP semiinsulating through compensation of residual donors (Deng et al, 2003).…”

“…As an example, the V P -Zn pairs have been shown to form through vacancy migration from the crystal surface in Zn-doped InP , while the In vacancies formed through thermal annealings render undoped InP semiinsulating through compensation of residual donors (Deng et al, 2003). Alloys of III-V semiconductors, such as GaInP (Dekker et al, 2002), AlGaAs (Mäkinen et al, 1993), or InGaAsP (Pinkney et al, 1998) have also been studied to some extent, as well as the so-called diluted nitrides where at most a few percent of nitrogen replaces the group-V component (Toivonen et al, 2003). Cation vacancies are typically found to be strongly correlated with the optoelectronic properties in these studies.…”

Defect study of MOVPE-grown InGaP layers on GaAs

“…The same defect was also observed in MBE-grown InGaP [7][8][9]. Until now, this dominant electron trap is considered as a typical bulk level in InGaP layers [2][3][4][5][6][7][8][9] to interfacial states generated by heat treatment in Au/InGaP Schottky diodes (LPE-grown InGaP) [10].…”

“…This value was always checked by capacitance vs. DC-bias method. Thus, an influence of the Poole-Frenkel effect as discussed by Dekker [7] can be excluded. While the energetic position of the E1 trap depends on the composition and strain, its concentration is the same for the differently strained samples grown with the same growth procedure and measured after the same storage time.…”

Investigation of proton damage in III-V semiconductors by optical spectroscopy

“…Irradiation damage on GaAs has already been extensively studied, including the determination of the range of protons and helium ions [8], irradiation induced changes of index of refraction [9], carrier compensation [10], and annealing effects [11], to give some examples. However, for InGaP material we found only a few reports of irradiation experiments, mostly related to the electrical parameters of the devices [12,13] and few about defects in the material [14,15]. Although for InP and GaP compounds some works show differences between experimental results and simulations regarding the penetration of protons [16], experiments on ion ranges for InGaP have not been reported yet.…”