Zn-deficient spinel-type
ZnGa2O4:Mn2+ phosphor thin films
were prepared using pulsed laser deposition.
With an increase (decrease) in the Zn deficiency (concentration) of
the films, changes in lattice constant, optical band gap, and photoluminescence
spectra were observed. All films without γ-Ga2O3:Mn showed green luminescence attributable to the transition
from the 4T1 state to the 6A1 state. In addition, the spectral shape changed depending
on the temperature. The luminescence spectra have two peaks resulting
from the Mn2+ ions located in the tetrahedral and octahedral
sites. These peaks had different thermal quenching temperatures, which
were around 320 and 260 K, respectively. Therefore, the spectral shape
changed with increasing temperature. The spectral shape also depended
on the Zn concentration. With an increase (decrease) in the Zn concentration
(deficiency) of the films, the intensity of emission from Td
increased in comparison with that from O
h
. Therefore, the position
of Mn2+ was controlled by Zn deficiency similarly to the
effect of crystal-site engineering.