Cationic Interstitials: An Overlooked Ionic Defect in Memristors

Abstract

Metal oxide-based memristors are promising candidates for breaking through the limitations in data storage density and transmission efficiency in traditional von Neumann systems, owing to their great potential in multi-state data storage and achievement of the in-memory neuromorphic computing paradigm. Currently, the resistive switching behavior of those is mainly ascribed to the formation and rupture of conductive filaments or paths formed by the migration of cations from electrodes or oxygen vacancies in oxides. However, due to the relatively low stability and endurance of the cations from electrodes, and the high mobility and weak immunity of oxygen vacancies, intermediate resistance states can be hardly retained for multilevel or synaptic resistive switching. Herein, we reviewed the memristors based on cationic interstitials which have been overlooked in achieving digital or analog resistive switching processes. Both theoretical calculations and experimental works have been surveyed, which may provide reference and inspiration for the rational design of multifunctional memristors, and will promote the increments in the memristor fabrications.

Energy Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

“…The results, shown in the supplementary section, indicates the set process contributes to an increase of nano-scaled oxide/semiconductor interfacial strains ranging from -0.5 to 0.5 % for the in-plane (Exx) and out-of-plane (Eyy) directions. To the degree these nano-scaled strain points contribute to electron charge traps or VO 2+ is quantitatively unknown in our device, but are known to exist in other studies [67][68][69][70] . In order to quantitatively assess the charge trap density needed to observe experimental phase shifts (Δng III-V/Si = 2.70 × 10 -3 ), we employed SILVACO ATLAS.…”

The cationic interstitials induced resistive switching: A case study on Mn-doped SnO2

“…Cationic interstitials, another common defect in oxides, however, have been overlooked in realising RS, especially in realising multi-level RS and analogue RS [16]. To the best of our knowledge, there are only a few instances that demonstrated the critical role in realising RS: based on the density functional theory (DFT), Zhu et al compared the V O and Ta interstitial in the Ta 2 O 5 -based RRAM and confirmed the contribution of Ta interstitials in realising RS under oxygen-poor conditions [12].…”