Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

Ke, Ying; Wang, Chengjie; Hsieh, Yi-Lin; Shiu, Guo-Yi; Kao, Yu-Cheng; Chen, Kuei-Ting; Chen, Hsiang; Han, Jung; Lin, Chia−Feng

doi:10.1021/acsaom.3c00152

Cited by 5 publications

(2 citation statements)

References 27 publications

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“…Boron ion implantation has been applied to confine current in VCSEL applications. , H ion implantation has been reported to limit the current spreading area in RC-LED applications . Our previous report has mentioned the cavity effect achieved by reducing the implantation aperture size . However, different resonances and directional emission patterns resulting from the implantation process and the thin SiO 2 aperture structure in optoelectronic devices have rarely been explored.…”

Section: Introductionmentioning

confidence: 99%

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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InGaN resonant-cavity light-emitting diodes (RC-LEDs) with a dielectric distributed Bragg reflector (DBR), a porous-GaN DBR, and a nitrogen ion (N + )-implanted aperture (6 μm diameter) were demonstrated. In the ion implantation process, the N + ions were penetrated directly through an indium-tin-oxide conductive layer and SiO 2 layer to form the insulated p-GaN:Mg layer, which provides a fascinating current confinement structure. The broadened electroluminescence (EL) peaks were measured at 401.5 and 435.8 nm in the implanted LED without double DBR structures. Multiple EL emission peaks with narrow line widths were observed in the RC-LED structure, indicating a strong resonant effect with different cavity modes. Two groups of effective resonant-cavity lengths, 1.48 and 1.50 μm, were analyzed through the angle-resolved EL spectra due to the anisotropic porous-GaN layers in the porous DBR structure. The divergent angles in far-field EL radiation patterns were reduced from 118°for the nontreated LED to 28°for the RC-LED structures. A high resonant-cavity effect, line-width narrowing phenomenon, and small divergent angle were observed in the InGaN RC-LED with 6 μm-diameter ion-implanted aperture and top dielectric/bottom porous DBR structures.

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Section: Introductionmentioning

confidence: 99%

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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“… 19 A large index contrast, electrical conductivity, a significant refractive index difference, and reasonable mechanical strength were observed in porous DBR structures. In our previous report, we utilized porous GaN materials to design embedded DBR structures, 20 aiming to achieve the fabrication of RC-LEDs and VCSELs. However, these structures primarily relied on lateral current injection, resulting in efficiency comparable to conventional face-up emitting structures.…”

Section: Introductionmentioning

confidence: 99%

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Shiu,

Ke,

Chen

et al. 2024

ACS Omega

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A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n + -GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membranetype LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and verticalcavity surface-emitting diode laser applications.

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Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

Gołyga,

Muziol,

Feduniewicz‐Żmuda

et al. 2024

Adv Elect Materials

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The integration of photonic elements with nitride optoelectronic structures allows control of emitted light properties, which is advantageous for achieving, e.g., a single wavelength lasing. Positioning of the photonic structures on the top surface of GaN‐based devices is problematic, in particular, for deposition of a metal contact to p‐type top layer. In this work, custom‐shaped submicron air channels arranged periodically 150 nm below the sample surface, forming an air/GaN diffraction grating embedded within a volume of the structure is proposed and fabricated. The fabrication process includes selective area Si ion implantation, GaN regrowth using plasma‐assisted molecular beam epitaxy, ultra‐high‐pressure annealing for efficient electrical activation of implanted Si without diffusion, and electrochemical etching for the removal of selectively doped material. Embedded air/GaN diffraction gratings with periodicity of 460 and 631 nm are shown. Width of air channels ranges from 46 to 320 nm. Angle and polarization resolved reflectivity measurements combined with theoretical modeling confirm the designed optical performance of the embedded diffraction gratings in the GaN volume. The presented design and fabrication of custom‐shaped, fully integrated photonic structures buried below the surface paves the way for novel type constructions of optoelectronic devices, such as compact distributed feedback laser diodes

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Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

Cited by 5 publications

References 27 publications

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

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