CCD Image Sensors in Deep-Ultraviolet

Abstract

The series Microtechnology and MEMS comprises text books, monographs, and state-of-the-art reports in the very active field of microsystems and microtechnology. Written by leading physicists and engineers, the books describe the basic science, device design, and applications. They will appeal to researchers, engineers, and advanced students. Mechanical MicrosensorsThe use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specif ic statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use.Typesetting: by the authors and TechBooks using a Springer L A T E X macro package Cover concept: eStudio Calamar Steinen Cover production: design & production GmbH, HeidelbergPrinted on acid-free paper 57/3141/jl -5 4 3 2 1 0 VI Preface identified. Because the mechanisms are associated with the Si-SiO 2 system, the analysis can also be extended to other silicon-based UV sensor architectures. Potential design optimization techniques to improve the quantum efficiency (QE) and stability of CCD sensors at DUV wavelengths are discussed in Part VI, followed by concluding remarks and recommendations for future research. A better understanding of the mechanisms underlying DUVinduced degradation of CCD sensors can assist in the design and development of new-and-improved DUV-sensitive CCD sensors.

Towards a New μ→eγ Search with the MEG II Experiment: From Design to Commissioning

“…VUV photons create electron-hole pairs in the shallow region of a MPPC, and hence the PDE for VUV light is sensitive to the surface state. Thermal annealing is known to be a solution to the surface damage [50] and was tested twice in 2019 and 2020. A higher bias voltage was applied to several MPPCs, and they were heated by Joule heat from the quench resistor.…”