CCD thermoreflectance spectroscopy as a tool for thermal characterization of quantum cascade lasers

Pierścińska, Dorota; Pierściński, Kamil; Morawiec, Magdalena; Karbownik, Piotr; Gutowski, Piotr; Bugajski, M.

doi:10.1088/0268-1242/31/11/115006

Cited by 20 publications

(18 citation statements)

References 24 publications

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“…Such calibration was performed for each device. Details on the calibration procedure can be found in [23]. The C TR for InP region is 4 × 10 −5 and for Active Region (AR) layers, an average value of C TR is 5.2 × 10 −5 .…”

Section: Resultsmentioning

confidence: 99%

“…can be found in [23]. The CTR for InP region is 4 × 10 and for Active Region (AR) layers, an average value of CTR is 5.2 × 10 −5 .…”

Section: Resultsmentioning

confidence: 99%

“…CCD TR was employed for the registration of thermal maps of the front facet of QCLs, as it provides a high speed of registration of the temperature image and sufficient spatial resolution that is required to reveal subtle construction details of the laser. More details concerning the experimental setup and measurement methodology can be found in our previous paper [23]. Thermal management in QCLs was also studied numerically, with a thermal model that was based on the commercial finite element solver [15].…”

Section: Ccd Thermoreflectance Spectroscopymentioning

confidence: 99%

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Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

et al. 2017

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Abstract:In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by combined Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) techniques. The thermal characteristics of lasers are investigated by Charge-Coupled Device CCD thermoreflectance. This method allows for the fast and accurate registration of high-resolution temperature maps of the whole device. We observe different heat dissipation mechanisms for investigated geometries of Quantum Cascade Lasers (QCLs). From the thermal point of view, the preferred design is the buried heterostructure. The buried heterostructures structure and epi-layer down mounting help dissipate the heat generated from active core of the QCL. The experimental results are in very good agreement with theoretical predictions of heat dissipation in various device constructions.

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Section: Resultsmentioning

confidence: 99%

“…can be found in [23]. The CTR for InP region is 4 × 10 and for Active Region (AR) layers, an average value of CTR is 5.2 × 10 −5 .…”

Section: Resultsmentioning

confidence: 99%

Section: Ccd Thermoreflectance Spectroscopymentioning

confidence: 99%

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Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

et al. 2017

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“…Temperature profile was found to have parabolic radial variation, with maximal heating in the centre of VCSEL. The CCD TR was also successfully employed in characterization of QCLs [84].…”

Section: Thermoreflectance In Analysis Of Devices and Materialsmentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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“…24 Therefore, it needs to be determined experimentally in case of each device. The TR has been previously extensively applied to study facet heating of different type semiconductor devices (edge emitting lasers, 25 laser bars, 26 vertical external-cavity surface emitting laser -VECSELs 27 and quantum cascade lasers -QCLs 28,29 ) based on the GaAs or InP material system. The application of TR spectroscopy to investigate the temperature distribution on the front facet of GaN based DL devices was presented for the first time in the paper.…”

Section: Experimental Techniquementioning

confidence: 99%

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

et al. 2017

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In this paper, thermal properties of InGaN-based diode lasers are investigated. The thermoreflectance technique was employed to study temperature distributions on the front facet of device. Measurements were performed, allowing investigation of the contribution of two main heat sources to the total temperature rise observed on the facet of device. It has been found that the contribution from reabsorption of laser emission at the facet, is much smaller than the one caused by Joule heating (electrical power). Additionally, devices have been investigated by means of SEM and FIB to determine the degradation sources. Inspection of the devices confirmed the lack of mirror damage or deposits. The main source of degradation was found to be located in the region of ridge and caused by extended defects. Our findings confirm the hypothesis that injected current is the major driving force of degradation.

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CCD thermoreflectance spectroscopy as a tool for thermal characterization of quantum cascade lasers

Cited by 20 publications

References 24 publications

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

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