Cd-based ohmic contact materials to p-ZnSe

Structural characterization of thin Ni films deposited on (001) ZnSe

“…[1][2][3] Recent success in the molecular-beam epitaxial growth of defect-free ZnSe/GaAs structures has resulted in an extension of the limit for the lifetime of ZnSebased LEDs, however, degradation is still a serious problem for ZnSe-based commercial devices. [4][5][6][7][8][9][10][11][12] Elemental metals, 4-9 multilayer metal structures ͑e.g., Ti/Pt/Au͒ 10 and the semimetal HgSe 11,12 have been tested in the search for an appropriate contact for ZnSe. High contact resistance and, as a result, a large voltage drop across the ZnSe/metal interface leads to a large local power dissipation and defect generation in the optically active area.…”

Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces

“…9 We have previously explored a possibility to reduce the SBH by forming an intermediate layer at p-ZnSe/metal interface and found that Cd reacted with ZnSe after annealing at temperatures higher than 250°C, forming a Cd-rich Cd x Zn 1-x Se (x≥0.9) layer epitaxially grown on the ZnSe. 10,11 However, no ohmic J-V behavior was obtained. Thus, the intermediate layer which reduces the SBH of DA contact should be discovered for pZnSe to prepare low resistance ohmic contacts.…”

Electrical properties at p-ZnSe/metal interfaces

“…[8][9][10][11][12] This V T value represents the breakdown voltage for the back-to-back contact of the Schottky diodes in the reverse bias mode. Therefore, the effects of Li or O doping on the electrical properties were investigated using the "turn-on" voltage, V T , and substrate sheet resistance, R S , which were determined from the J-V curves.…”

“…6 A mixed solution of saturatedbromine-water, HBr, and H 2 O (named as a SBW solution) 7 cleaned almost completely the ZnSe surface and only a few monolayers of contamination were observed after cleaning. 9,11 In this paper, we will explore a possibility to fabricate a heavily doped layer in the vicinity of the p-ZnSe/metal interface by DA technique. 8,9 The SBHs of p-ZnSe were determined to be 1.20±0.1 eV in our laboratories for a variety of metals, indicating that the Fermi-level would be pinned at the p-ZnSe/metal interface.…”