Cd-Doping Effects on The Properties of Polycrystalline α-In2Se3 Thin Films

Qasrawi, A.F.

doi:10.1002/1521-4079(200204)37:4<378::aid-crat378>3.0.co;2-e

Cited by 14 publications

(16 citation statements)

References 23 publications

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“…VRH in CoSb 3 and Ni-doped CoSb 3 bulk samples was also observed by Dyck et al 30 and Sun et al 36 However, they have obtained a much lower transition temperature of 50 K or lower, which is comparable to typical values reported in the literature. 37,38 In our case, the presence of the VRH would also support the existence of an impurity band corresponding to the low excitation energy of 20 meV.…”

Section: A Electric Transport Coefficients Of Co-sb Thin Films Deposi...supporting

confidence: 63%

Thermoelectric properties of skutterudite CoSb3 thin films

Daniel

Lindorf

Albrecht

2016

Journal of Applied Physics

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The thermoelectric properties of Co-Sb thin films with different Sb content and with a thickness of 30 nm were investigated with respect to the composition and the corresponding structural properties of these films. The films were prepared by molecular beam deposition either by codeposition on heated substrates or room temperature deposition followed by a post-annealing step. It was found that the prepared films exhibit bipolar conduction, indicated by a positive Hall constant and a negative Seebeck coefficient. The obtained results can be well explained by using the bipolar model, assuming heavy electrons and light holes, which was finally confirmed experimentally by the preparation of p-and n-type doped CoSb 3 thin films. Furthermore, variable range hopping was identified by temperature dependent transport measurements as dominant conduction mechanism at low temperatures.

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Section: A Electric Transport Coefficients Of Co-sb Thin Films Deposi...supporting

confidence: 63%

Thermoelectric properties of skutterudite CoSb3 thin films

Daniel

Lindorf

Albrecht

2016

Journal of Applied Physics

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“…As for example, in the low temperature range (100-10 K), the conductivity is just the sum of the two contributions, σ 2 + σ 3 ; each of these contributions depends exponentially-in accordance with equation (1)-on the respective donor energies E σ 2 and E σ 3 in the regions of 210-110 K and 100-10 K, respectively. With this modification, equation (1) takes the form [9] ln(σ…”

Section: Electrical Propertiesmentioning

confidence: 99%

Photoelectronic and electrical properties of InS crystals

Qasrawi

Gasanly

2002

Semicond. Sci. Technol.

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To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 ± 2) meV below the conduction band with a density of about 4.8 × 10 11 cm −3 . The conductivity data above 110 K reveal an additional two independent donor levels with activation energies of (50 ± 2) and (164 ± 4) meV indicating the extrinsic nature of conductivity. The spectral distribution of photocurrent in the photon energy range of 0.8-3.1 eV reveals an indirect band gap of (1.91 ± 0.04) eV. The photocurrent-illumination intensity dependence follows the law I ph ∝ F γ , with γ being 1.0 and 0.5 at low and high illumination intensities indicating the domination of monomolecular and bimolecular recombination, respectively. It is observed that the photocurrent increases in the temperature range of 10 K up to T m = 110 K and decreases or remains constant for 110 K < T < 160 K and increases again above 160 K. The temperature dependence of the photocurrent reveals an additional shallow impurity level with activation energies of 3 meV.

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“…The γ values for 0.5 and 1.0 correspond to bimolecular recombination and mono molecular recombination mechanism, respectively [20]. Whereas, the value of the exponent lies between 0.5 and 1.0 for continuous distribution of trapping centers [21]. The value of γ less than unity is commonly associated with photocarrier life time determined by trapping centres within the band gap and also indicates a continuous, exponential distribution of trapping centers N(E) given by [22]:…”

Section: Measurementsmentioning

confidence: 99%

Characterization of mono-crystalline silicon solar cell

Azim¹,

Yahia

Sakr

2014

Appl. Sol. Energy

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The effects of temperature on the photovoltaic performance of mono crystalline silicon solar cell have been investigated by current voltage characteristics and transient photo response measurements. The fill factor and efficiency values of the solar cell at various temperatures were determined. The variation in the power conversion efficiency and fill factor values is mainly due to the change of short circuit current, open circuit voltage V oc with temperature for the studied mono crystalline silicon cell. The increase in the short circuit current I sc with the increase of illuminations and temperature is interpreted by the increase in the gen eration of electron hole pairs by thermal energy recombination mechanism. The mono crystalline silicon solar cell exhibits a high efficiency of 14.215% at (AM 1.5) 100 mW/cm 2 . The obtained results indicate that the studied solar cell exhibits a high stability, sensitivity and quality and it can be used for photovoltaic power generation systems as a clean power source.

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Cd-Doping Effects on The Properties of Polycrystalline α-In2Se3 Thin Films

Cited by 14 publications

References 23 publications

Thermoelectric properties of skutterudite CoSb3 thin films

Thermoelectric properties of skutterudite CoSb3 thin films

Photoelectronic and electrical properties of InS crystals

Characterization of mono-crystalline silicon solar cell

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