Cd-Free Cu(In,Ga)(Se,S)<sub>2</sub> Thin-Film Solar Cell With Record Efficiency of 23.35%

Nakamura, Mihoko; Yamaguchi, Koji; Kimoto, Yoshinori; Yasaki, Y.; Kato, Takuya; Sugimoto, H.

doi:10.1109/jphotov.2019.2937218

Cited by 1,091 publications

(867 citation statements)

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“…The heavy alkali metals (Rb and Cs) are expected to be more effective than (K and Na) owing to better diode quality . Current world‐record devices have been obtained after Rb and Cs treatments …”

Section: J–v Parameters Of Csf‐free and Csf‐treated Cigs Solar Cells mentioning

confidence: 99%

“…[4] Recently, there have been several reports on improving the efficiency of CIGS solar cells via surface modification by alkalimetal treatments. [16][17][18][19][20][21][22][23][24][25][26][27][28][29] The heavy alkali metals (Rb and Cs) are expected to be more effective than (K and Na) owing to better diode quality. [30][31][32] Current world-record devices have been obtained after Rb and Cs treatments.…”

mentioning

confidence: 99%

“…[30][31][32] Current world-record devices have been obtained after Rb and Cs treatments. [21,30] Several studies have been performed on proton irradiation onto CIGS solar cells (without alkali-metal treatment). However, there are almost no studies describing similar effects on alkali-treated CIGS solar cells.…”

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confidence: 99%

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Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Khatri

Lin

Nakada

et al. 2019

Physica Rapid Research Ltrs

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Several studies have been performed on proton irradiation onto alkali‐metal untreated Cu(In,Ga)Se2 (CIGS) solar cells. However, there are almost no studies describing similar effects on alkali‐treated CIGS solar cells. With this motivation, this work investigates proton irradiation and annealing effects under illumination on cesium‐fluoride‐free (CsF‐free) and CsF‐treated CIGS solar cells. Both CsF‐free and CsF‐treated CIGS solar cells degrade under proton irradiation. External quantum efficiency measurements show degradation in long wavelengths after the treatment. The experimental data are fitted with a simulation, which show that proton‐irradiated degradation is more severe at high fluence. Capacitance–voltage measurements show a broadening of the depletion region after proton irradiation, which is due to the decreased net carrier concentration. It is proposed that proton irradiation at low fluence generates shallow‐type defects, whereas high‐fluence protons generate deep defects. However, it is observed that room‐temperature storage of the proton‐irradiated solar cells causes partial recovery. Thermal annealing under illumination treatments is found to be beneficial to the drastic recovery of the performance of solar cells irradiated at low fluence. High‐fluence proton‐irradiated solar cells undergo minor recovery.

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Section: J–v Parameters Of Csf‐free and Csf‐treated Cigs Solar Cells mentioning

confidence: 99%

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confidence: 99%

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Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Khatri

Lin

Nakada

et al. 2019

Physica Rapid Research Ltrs

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“…The PDT has been demonstrated to be beneficial for CIGS solar cells. In recent years, significant improvements in chalcopyrite devices have been accomplished with efficiencies exceeding 23% . This high performance was achieved by incorporating KF, RbF, or CsF into the absorber layer via PDT.…”

Section: Introductionmentioning

confidence: 99%

Limitation of Current Transport across the Heterojunction in Cu(In,Ga)Se₂Solar Cells Prepared with Alkali Fluoride Postdeposition Treatment

et al. 2020

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Postdeposition treatments (PDTs) of chalcopyrite absorbers with alkali fluorides have contributed to improving the efficiency of corresponding solar cell devices. However, cells prepared with PDTs also tend to exhibit nonideal current–voltage (J–V) characteristics especially at low temperatures. These include blocking of the forward diode current, saturation of the open‐circuit voltage with respect to temperature, a discrepancy between dark and Jsc (Voc) characteristics, and a crossover between dark and light J–V curves. These are typical observations while measuring the temperature‐dependent J–V characteristics. Herein, the influence of electronic material parameters on the blocking of the current across the heterojunction in numerical simulations is reported. It is shown that a low‐doped ZnO window layer, acceptor defects at the CdS/ZnO interface, or a high band offset at that interface lead to similar nonideal J–V characteristics, suggesting that the carrier density in the buffer layer is a crucial parameter for the current limitation. Connections between the effects of PDT previously reported in literature and the electronic material parameters considered in the numerical model are discussed to explain the nonideal J–V characteristics caused by the PDTs.

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“…Among different alkali metal‐treated solar cells, cesium fluoride‐treated CIGS solar cells possess the highest conversion efficiency . The radiation tolerance properties of CsF‐treated CIGS solar cells have been investigated, and high radiation tolerance was shown, similar to alkali‐untreated CIGS solar cells .…”

mentioning

confidence: 99%

Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells

Khatri

Yashiro

Lin

et al. 2020

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Metastable behavior of cesium fluoride (CsF)‐treated Cu(In1–x,Gax)Se2 (CIGS) solar cells is investigated under heat‐light soaking (HLS) and heat‐soaking (HS) treatments. HLS increases open‐circuit voltage, fill factor, efficiency, and net carrier concentration and decreases short‐circuit current density, whereas heat‐soaking treatment acts oppositely. The performance of a CsF postdeposition treatment to CIGS thin film in selenium vapor, and closer to stoichiometry copper content, did not mitigate the open‐circuit voltage improvement after HLS. These results argue the traditional concept of the VSe–VCu divacancy complex for the total beneficial effect of HLS in alkali‐treated CIGS solar cells. The metastable behavior observed in the CsF‐treated devices due to the HLS and HS treatments is explained by the specific behavior of alkali‐containing new compounds at the surface and/or the migration of alkali metals at the surface and bulk regions.

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Cd-Free Cu(In,Ga)(Se,S)₂ Thin-Film Solar Cell With Record Efficiency of 23.35%

Cited by 1,091 publications

References 20 publications

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Limitation of Current Transport across the Heterojunction in Cu(In,Ga)Se₂Solar Cells Prepared with Alkali Fluoride Postdeposition Treatment

Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells

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Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%

Cited by 1,091 publications

References 20 publications

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se2 Solar Cells and Annealing Effects under Illumination

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se2 Solar Cells and Annealing Effects under Illumination

Limitation of Current Transport across the Heterojunction in Cu(In,Ga)Se2Solar Cells Prepared with Alkali Fluoride Postdeposition Treatment

Metastable Behavior on Cesium Fluoride‐Treated Cu(In1–x,Gax)Se2 Solar Cells

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Cd-Free Cu(In,Ga)(Se,S)₂ Thin-Film Solar Cell With Record Efficiency of 23.35%

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se₂ Solar Cells and Annealing Effects under Illumination

Limitation of Current Transport across the Heterojunction in Cu(In,Ga)Se₂Solar Cells Prepared with Alkali Fluoride Postdeposition Treatment

Metastable Behavior on Cesium Fluoride‐Treated Cu(In_1–x,Ga_x)Se₂ Solar Cells