Cd ion implantation in AlN

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

doi:10.1016/j.nimb.2012.08.007

Cited by 6 publications

(4 citation statements)

References 30 publications

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“…Electronically inactive defects only decrease active volume of the device and have minimum undesirable effects whereas electronically static defects trap charge carriers but do not produce negligible charging and discharging transients after getting charged at start up of the device. The work presented here in conjunction with the fundamental plasma work [20,21] may lead to applications in the field of Nanotechnology [22,23] and nuclear instruments and methods [24][25][26][27]. Figure 3 is a pictorial view of findings of the paper.…”

Section: Potential Applications and Discussionmentioning

confidence: 95%

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

Rana¹

2012

WJNST

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An important problem of defect charging in electron-hole plasma in a semiconductor electronic device is investigated using the analogy of dust charging in dusty plasmas. This investigation yielded physical picture of the problem along with the mathematical model. Charging and discharging mechanism of charge carrier traps in a semiconductor elec-tronic device is also given. Potential applications of the study in semiconductor device technology are discussed. It would be interesting to find out how dust acoustic waves in electron-hole plasma in micro and nanoelectronic devices can be useful in finding out charge carrier trap properties of impurities or defects which serve as dust particles in elec-tron-hole (e-h) plasma. A new method based on an established technique “deep level transient spectroscopy” (DLTS) is described here suggesting the determination of properties of charge carrier traps in present and future semiconductor devices by measuring the frequency of dust acoustic waves (DAW). Relationship between frequency of DAW and properties of traps is described mathematically proposing the basis of a technique, called here, dust mode frequency deep level transient spectroscopy (DMF-DLTS)

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Section: Potential Applications and Discussionmentioning

confidence: 95%

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

Rana¹

2012

WJNST

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“…XRD experiments were carried out at Pprime in the Bragg (reflection) geometry on an automated laboratory-made two-circle goniometer with the radiation Ka1 of copper (l = 1.5405 Å) provided by a 5 kW RIGAKU RU-200 generator with a vertical linear focus in combination with a quartz monochromator. Previous X-ray reciprocal space mapping experiments on ion implanted AlN films have shown that the implantation-induced lattice strain is only directed along the surface normal direction (reciprocal space map not shown in [39], [41]). q-2q scans were carried out near the (0002) Bragg reflection (2qB = 36.02°) using 0.005 stepping motors.…”

Section: Methodsmentioning

confidence: 98%

“…The materials facing plasma will also be exposed to intense fluxes of low energy He and H. It is consequently imperative to clarify the mechanisms responsible for the degradation of the material properties under irradiation and gas injection. From the point of view of the microstructural evolution, some neutron irradiation studies were performed on AlN [11][12][13], as well as mostly optically active rare earth, dopant and heavy ion implantations [7,[14][15][16][17][18][19][20], nearly all of which have highlighted the particular complexity of the induced damaging mechanisms mostly related to efficient dynamic annealing processes.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Jublot-Leclerc

Bouhali

Pallier

et al. 2021

Journal of the European Ceramic Society

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The elastic strain build-up and damage induced by 50 keV He implantation at RT and 550°C into (0001)AlN were studied using a combination of XRD experiments, XRD simulation, and TEM experiments. Evidence for strong dynamic annealing with efficient point defect recombination is reported at RT. The point defect recombination is found to be enhanced with increasing implantation temperature where He concentration is low, indicating increased mobility of interstitial-type defects and resulting in low strain. A reversed effect is observed for He concentration exceeding 5 at.% (3 at.%) at RT (550°C) : thermally activated mechanisms related to the nucleation and growth of He-V complexes overcome the point defect recombination and promote the strain and damage build-up. At 1x10 17 cm-2 , only clusters of interstitials are observed at RT, whilst bubbles and basal stacking faults are additionally formed at 550°C for a critical He concentration estimated to be close to 4-6 at.%.

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“…It is therefore essential to study the influence of thermal annealing conditions on the structural and optical properties of the implanted AlN films. So far, the impact of different ion species (Si, Cd, Ag, Hf and Ti) on the structural properties of ion-implanted AlN thin films have been reported [23][24][25][26][27][28][29], but further studies are needed to better understand the influence of thermal annealing conditions on these properties. In this work, we report on the impact of high energy implantation of Zr ions and subsequent annealing in various gaseous atmosphere on the structural and optical properties of polycrystalline AlN thin films.…”

Section: Introductionmentioning

confidence: 99%

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Aghdaei

Pandiyan

Ilahi

et al. 2020

Journal of Applied Physics

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We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy measurements show that the structural and morphological properties of the Zr-implanted AlN films depends on the annealing gaseous environment. The post-implantation annealing under argon atmosphere yields the lowest structured surface roughness with increased grain size. Photoluminescence spectroscopy revealed multiple point defects and defect complexes related emission bands in the visible range. A series of absorption bands have been observed using photoluminescence excitation spectroscopy. The origin of the emission or absorption bands is identified and attributed to various types of point defects and defect complexes, theoretically reported for AlN. New emission and absorption peaks at 1.7 eV (730 nm) and 2.6 eV (466 nm), respectively, have been identified and attributed to the (ZrAl-VN) 0 defect complexes.

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Cd ion implantation in AlN

Cited by 6 publications

References 30 publications

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

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