CD performance of a new high-resolution laser pattern generator

Abstract

CD uniformity is one of the most critical parameters for mask making today. The mask error factor (MEF) in lithography for features that are smaller than the stepper wavelength means that any CD error is transferred to the wafer to a greater extent than the stepper reduction factor would indicate. CD results form a new laser pattern generator, the Omega6000 product line, will be presented. The system features an acousto-optic deflection architecture specifically designed to meet the CD requirements of 180 nm photomasks. A 0.86 NA final lens provides the high resolution ofthe system. The CD control and the high resolution makes the system well suited for today's advanced photomasks.

Pattern generation with SLM imaging

“…Throughput then can only be enhanced to a limited degree by increasing pixel rates. Adding beams, used since long with laser pattern generators [2], relieve the situation, but in the longer time perspective, a limited number of beams cannot sustain the writing times acceptable to the industry.…”

“…The technology is being grafted onto the Omega6000 platform [2] and integrated into a system for 130-100 nm technology mask making, the Sigma7100. The system uses an excimer laser source at 248 nm wavelength.…”