CdS-Based Photodetectors for Visible-UV Spectral Region

Saxena, Nupur; Kalsi, Tania; Kumar, Pragati

doi:10.1007/978-3-031-20510-1_11

Cited by 5 publications

(2 citation statements)

References 76 publications

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“…Cadmium sulfide is a multifunctional semiconductor with excellent properties such as a large direct band gap (2.24 eV at room temperature), high carrier mobility, low work function, good transport properties, large surface-to-volume ratio, chemical capability, and thermal stability [1][2][3][4]. These characteristics make CdS highly promising for various optical and optoelectronic applications, including nanoscale laser [5,6], optical waveguiding [7,8], field-effect transistor (FET) [9,10], light emitting diode [11,12] and photodetector [13][14][15], etc. To date, various high-performance devices have been reported.…”

Section: Introductionmentioning

confidence: 99%

Enhanced photoresponse of the CdS microwire photodetectors based on indium ion implantation

Zhao,

Wang,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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One-dimensional nano/microstructures have garnered significant attention as the fundamental building blocks for the high-performance integrated systems. Among them, CdS microwires, due to their intriguing optoelectronic properties, hold great promise as candidates for the next generation of high-performance photodetectors. In this study, CdS microwires with wurtzite structure are synthesized using a common chemical vapor deposition method. Optical characterizations revealed that the synthesized microwires exhibited a distinct near band edge emission peak at 515 nm and a broad defect-related emission peak at approximately 650 nm. It is well-known that the intrinsic defects and impurities can significantly degrade the photoresponse properties of the CdS microwire-based photodetectors. To address this issue and enhance the device’s photoresponse performance, indium (In) ion implantation is employed to heal the intrinsic defects. Compared to the pristine CdS microwires, the CdS microwire-based photodetectors with In ion implantation demonstrated a remarkable improvement in photoresponse properties. Specifically, they exhibited a higher responsivity of 390 mA W−1 and external quantum efficiency of 119% (a 94.6-fold increase). The specific detectivity also increased to 3.82 × 107 Jones (a 13-fold increase), while the decay time improved to 652 ms (compared to 3.82 s for pristine devices). Overall, our findings highlight the effectiveness of ion implantation as a strategy to enhance the performance of CdS microwires-based photodetectors. This advancement renders them potentially applicable in integrated photonic, electronic and photoelectric systems.

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Section: Introductionmentioning

confidence: 99%

Enhanced photoresponse of the CdS microwire photodetectors based on indium ion implantation

Zhao,

Wang,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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show abstract

“…[1][2][3][4] CdS nanostructure-based photodetectors are gaining popularity due to their increased photosensitivity. [5][6][7][8] However, during the synthesis process, the creation of local non-stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film. [3,[9][10][11] These defects have the capacity to influence the photo-conducting properties of bulk CdS.…”

mentioning

confidence: 99%

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Enhanced luminescence and visible-light photodetection performance of novel Bi, Sm, and Bi:Sm co-doped CdS nanostructured thin films developed via nebulizer spray pyrolysis technique

Shkir

2024

J Sol-Gel Sci Technol

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CdS-Based Photodetectors for Visible-UV Spectral Region

Cited by 5 publications

References 76 publications

Enhanced photoresponse of the CdS microwire photodetectors based on indium ion implantation

Enhanced photoresponse of the CdS microwire photodetectors based on indium ion implantation

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Enhanced luminescence and visible-light photodetection performance of novel Bi, Sm, and Bi:Sm co-doped CdS nanostructured thin films developed via nebulizer spray pyrolysis technique

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