CdS nanowires array on Cd foil: synthesis and optical properties

Li, Yong; Gao, Lei; Song, Yunfei; Xi-chang, Xue; Ji, Pengfei; Zhou, Fengqun; Li, Xinjian

doi:10.1016/j.matlet.2014.10.030

Cited by 14 publications

(6 citation statements)

References 27 publications

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“…The clear lattice fringes can be observed and the distance is measured to be ∼ 0.68 nm and be indexed to the lattice spacing of the planes of 2H-CdS. [26,27] The inset of Fig. 2(d) shows the selected-area electron diffraction (SAED) from the marked area.…”

Section: Resultsmentioning

confidence: 99%

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

Li¹,

Ji²,

Song³

et al. 2021

Chinese Phys. B

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Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction. The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and CdS nanofilms on the ITO glass in turn. The relation of current density to applied voltage (I–V) shows the obvious rectification effect. From the analysis of the double logarithm I–V curve it follows that below ∼ 2.73 V the electron behaviors obey the Ohmic mechanism and above ∼ 2.73 V the electron behaviors conform to the space charge limited current (SCLC) mechanism. In the SCLC region part of the traps between the Fermi level and conduction band are occupied, and with the increase of voltage most of the traps are occupied. It is believed that CdS/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.

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Section: Resultsmentioning

confidence: 99%

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

Li¹,

Ji²,

Song³

et al. 2021

Chinese Phys. B

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“…According to the principle of XRD, the increase of FWHM might reflect the decrease of the average size of nanocrystals [13]. Based on Scherrer's formula [6] and the data corresponding to the (002) diffraction peaks, the average sizes of CdS nanocrystals with the different concentration of buffer agent are calculated as ∼26.9 nm, ∼19.2 nm, ∼11.6 nm, and ∼8.1 nm, respectively. Obviously, the average size of CdS nanocrystals is decreasing with the increasing concentration of buffer agent.…”

Section: Resultsmentioning

confidence: 99%

“…CdS is an important semiconductor with a direct band gap of ∼2.40 eV at room temperature, which can be fabricated through the solvothermal, hydrothermal, and physical/chemical vapor deposition and chemical bath deposition (CBD) methods [5][6][7][8][9]. Based on high sensitivity and effect photophysical properties, CdS is suitable for the applications in the fields of photodetectors, light-emitting diodes, lasers, and solar cells [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Influence of Buffer Agent Concentration on the Optical Properties from CdS Nanocrystals on Silicon Nanoporous Pillar Array

Jiang

et al. 2015

Journal of Nanotechnology

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The chemical bath deposition (CBD) method is very crucial to the reaction rate. Generally, the rate can be controlled through tuning buffer agent concentration. CdS nanocrystals on the silicon nanoporous pillar array (CdS/Si-NPA) have been prepared through the CBD method. By varying the buffer agent concentration, the reaction rates can be tuned. The diffraction peaks of hexagonal CdS and Cd can be observed due to the reduction of Cd2+caused by the silicon nanoporous pillar array. The average size of CdS nanocrystals is decreased with the increasing buffer agent concentration and the optical band gaps from CdS nanocrystals are increased. From the photoluminescence of CdS/Si-NPA, it can be observed that the blue emissions are independent of the buffer agent concentration and the green emissions show blue shift with the increasing buffer agent concentration.

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“…They used Cd foil as precursor of Cd 2+ and the substrate with diameter 20–40 nm and lengths 10–13 μm. [ 217 ] Duan et al carried‐out synthesis of CdS nanobelt from its nanoparticles using thermal‐evaporating method [ 218 ] that has shown characteristics of single crystalline material. Kong et al.…”

Section: Cds As a Promising Materialsmentioning

confidence: 99%

“…They used Cd foil as precursor of Cd 2+ and the substrate with diameter 20-40 nm and lengths 10-13 μm. [217] Duan et al carried-out synthesis of CdS nanobelt from its nanoparticles using thermal-evaporating method [218] that has shown characteristics of single crystalline material. Kong et al reported a fabrication of polyhedral CdS flower-like architectures through a mixed solvothermal method that resulted with diameter of 1.5-2.0 μm with a hexagonal wurtzite structure and constituted by some pyramids with bottom side length of 440 nm.…”

Section: Nanostructuring For Efficiency Improvementmentioning

confidence: 99%

Hurdles and recent developments for CdS and chalcogenide‐based electrode in “Solar electro catalytic” hydrogen generation: A review

Pareek

Borse

2021

Electrochemical Science Adv

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There are tremendous efforts to realize the idea of employing photoelectrochemical (PEC) technology for generating chemical energy from solar energy. The most important feature of this technology is to coordinate the energetics of an electrochemical reaction with the solar spectrum. So, the photoelectrochemistry of a semiconducting material plays a vital role in this arena. Exploring an efficient and stable semiconductor material for such purpose is an essential prospect. There are several sulfide selenide-based semiconductors viz. II-VI (Zn/Cd = S/Se) semiconductors those exhibit high potential in PEC application. Nonetheless, they suffer by certain corrosion issues, which are important to be reviewed and are discussed here. This review highlights the significant role of cadmium chalcogenides among various materials explored in this technology. CdS is the most studied system among all those with perfect band gap and band-edge position exhibiting material, desired for photoanode in PEC cell. Next, recent progresses achieving enhancement in the performance of CdS photoanodes by doping, modifying the surface, morphology reconstruction, and engraving heterostructure is discussed in detail. The role of the nanostructured techniques, improved photo electrochemistry with redox couples, and advanced interfacial and band gap engineering is explored to overcome the lack of chemical stability of CdS. The review concludes with the bright scope of CdS as an efficient PEC material in the form of combined semiconductor systems with an optimum band gap, bandedge, and their complimentary properties rather than a single component material.

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CdS nanowires array on Cd foil: synthesis and optical properties

Cited by 14 publications

References 27 publications

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

Influence of Buffer Agent Concentration on the Optical Properties from CdS Nanocrystals on Silicon Nanoporous Pillar Array

Hurdles and recent developments for CdS and chalcogenide‐based electrode in “Solar electro catalytic” hydrogen generation: A review

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