2015
DOI: 10.1016/j.apsusc.2014.12.122
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CdS thin films prepared by laser assisted chemical bath deposition

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Cited by 37 publications
(17 citation statements)
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“…By the 1064 nm irradiation, 10 minutes deposited CdS thin films shows a higher band gap (2.6 eV) than that obtained for 15 and 20 minutes and this can be due to the changes in morphologies of the thin films as seen in the AFM analysis. These results of optical bandgaps are similar to the previously reported study on CdS thin films prepared under continuous wave laser assisted chemical bath deposition [16].…”
Section: X-ray Photoelectron Spectroscopysupporting
confidence: 94%
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“…By the 1064 nm irradiation, 10 minutes deposited CdS thin films shows a higher band gap (2.6 eV) than that obtained for 15 and 20 minutes and this can be due to the changes in morphologies of the thin films as seen in the AFM analysis. These results of optical bandgaps are similar to the previously reported study on CdS thin films prepared under continuous wave laser assisted chemical bath deposition [16].…”
Section: X-ray Photoelectron Spectroscopysupporting
confidence: 94%
“…Many studies have been done to improve the thin film grain growth, its morphology and opto-electronic properties by altering the CBD process by supplying additional energies [16], [17], [18]. A comparative study on the CdS thin films grown by the conventional CBD and continuous wave (CW) laser assisted CBD illustrated accelerated film growth during laser irradiation due to the additional energy supplied [16], resulting in the formation of good quality thin films. Also, plasma treatments on the CBD CdS thin films modified their structural, optical and electrical properties [17].…”
Section: Introductionmentioning
confidence: 99%
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“…These inorganic semiconductors can act as scaffolds in splitting and transferring a flow of photoinduced charge carriers in organic/inorganic hybrid structure, showing promising prospects in photoelectronic applications. Here we introduce nanocrystalline CdS as electron acceptors in hybrid conjugated polymer/inorganic semiconductor composites, not only because it is cheap and environmentally friendly, but also due to its tunable reactivity in high purity and crystallinity at low temperature [27,28]. The iodine nanoparticles are firstly coated onto the surface of polyaniline (PANI) nanofibers to increase the conductivity of PANI, serving as an electron donor (i.e., I 2 @PANI).…”
Section: Introductionmentioning
confidence: 99%
“…The photosensitivity was 2.83 and the low sensitivity was caused by the deposition of Ga on the surface of the nanowire and electrode gap during the FIB fabricating process. A host of nano-opto electronic devices such as LED, photovoltaic devices and photodetectors were successfully constructed with CdS / Ga hetero junctions.Laser Assisted Chemical Bath Deposition (LACBD) was adopted by Garcia et al[30] to prepare CdS thin films from a Chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. Many characterization techniques including Atomic force microscopy (AFM) were carried out for the analysis of CdS thin films because of in situ irradiation of the bath.…”
mentioning
confidence: 99%