CdSe/ZnS Quantum Dot Patterned Arrays for Full-Color Light-Emitting Diodes in Active-Matrix QLED Display

Abstract

Quantum dot light-emitting diodes (QLEDs) are increasingly being recognized as next-generation display technology, owing to their wide color gamut, high saturation levels, and low energy consumption. However, the primary challenge in QLED display fabrication lies in precisely depositing these inorganic quantum dot (QD) nanoparticles over a large area multiple times. Nowadays, solution processes such as inkjet printing and screen printing have been employed to address these challenges; however, they still have some trade-offs between multicolor deposition, precise spatial arrangement, and equipment cost. Here, the precise assembly of multiple QD patterned arrays on one target substrate was achieved using an asymmetric wettability interface assembly (AWIA) template, resulting in a high-pixel resolution and full-color QLED device. The asymmetric wettability interface between the top and bottom of the silicon pillar on the template allows for precise splitting and pinning of a continuous liquid film, facilitating further assembly of QD pattern arrays. Additionally, the multicolor and multishape QD pattern array was created through QD surface modification (orthogonal solvent protection) and dislocation pinning processes (reducing dissolution time) during the repetition process. Consequently, high-resolution (each pixel ≈ 10 μm; PPI ≈ 1278) full-color (yellow, cyan, violet, and white) QLED devices were fabricated efficiently. This approach offers a perspective for assembling multiple micropatterned arrays for high-resolution electronic devices.